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INIS
layers
100%
gallium nitrides
89%
aluminium oxides
53%
grass
50%
growth
43%
nanostructures
43%
silicon
42%
applications
39%
glass
39%
plasmons
38%
substrates
37%
coatings
35%
plasma
35%
surfaces
35%
etching
33%
deposition
32%
fabrication
28%
films
26%
solutions
25%
emission
24%
gratings
23%
heterojunctions
23%
antireflection coatings
23%
electrons
21%
radiations
21%
vapor phase epitaxy
21%
semiconductor materials
20%
aluminium nitrides
20%
gallium arsenides
19%
zinc oxides
19%
nanowires
19%
metals
18%
indium
16%
power
16%
refractive index
15%
comparative evaluations
15%
thin films
14%
range
13%
doped materials
13%
equilibrium
13%
temperature range 0273-0400 k
13%
energy
13%
resonance
12%
tin oxides
12%
electric fields
12%
transparency
12%
transistors
12%
epitaxy
11%
thickness
11%
strains
11%
Keyphrases
AlGaN-GaN
28%
2D Plasmons
28%
D Electrons
22%
Terahertz Emission
22%
Aluminum Oxide
19%
Grass-like
19%
Atomic Layer Etching
19%
Heterojunction
19%
Gallium Nitride
19%
Two-dimensional Plasmon
19%
Substrate Effect
19%
Metal Organic Vapor Phase Epitaxy (MOVPE)
15%
Metal Grating
15%
Plasmon Resonance
13%
Non-equilibrium Conditions
12%
2D-2D
12%
High Electron Mobility Transistor
11%
Electrically Excited
11%
Aluminum Gallium Nitride (AlGaN)
11%
Engineering
Heterojunctions
33%
Atomic Layer
32%
Two Dimensional
28%
Terahertz
28%
Nitride
24%
Gallium Arsenide
19%
Atomic Layer Deposition
19%
Nanowire
19%
Electric Field
16%
Refractivity
16%
Refractive Index
16%
Nonequilibrium
12%
Room Temperature
12%