INIS
aluminium nitrides
10%
applications
19%
bonding
50%
cavities
31%
crystals
13%
deposition
15%
design
11%
devices
30%
diaphragm
11%
doped materials
26%
encapsulation
16%
etching
15%
fabrication
21%
films
12%
ghz range
12%
investigations
10%
layers
23%
levels
57%
losses
14%
mhz range
13%
microelectromechanical systems
11%
packaging
31%
plasma
18%
power
16%
quartz
13%
range
10%
resonance
12%
resonators
79%
sensors
13%
silicon
100%
stability
13%
substrates
12%
surfaces
17%
thickness
16%
waveguides
14%
Keyphrases
Atomic Layer Deposition
15%
BAW Resonator
15%
Direct Bonding
20%
Doped Silicon
15%
Elastic Constants
11%
Fabrication Methods
11%
MEMS Resonator
26%
Micro-electro-mechanical Systems
13%
Microsystems
15%
Plasma-activated
13%
Resonator
48%
Silica
14%
Silicon MEMS
11%
Silicon Resonator
19%
Silicon Wafer
14%
Silicon-on-insulator
24%
SOI Wafer
13%
Temperature Compensated
10%
Temperature Effect
10%
Wafer
38%
Wafer Bonding
19%
Wafer Level
20%
Wafer-level Packaging
25%
Wafer-scale
14%
Engineering
Atomic Layer Deposition
11%
Cap Wafer
11%
Deep Level
11%
Diaphragm
15%
Direct Bonding
14%
Interposer
10%
Level Packaging
16%
Microelectromechanical System
83%
Microsystem
11%
Resonator
54%
Silicon Dioxide
11%
Silicon on Insulator
21%
Silicon Wafer
10%
Wafer Bonding
25%
