INIS
silicon
100%
devices
77%
cryogenics
74%
performance
66%
solids
44%
refrigerators
44%
energy
44%
electrons
44%
control
40%
substrates
40%
optimization
37%
holes
33%
superconducting junctions
33%
refrigeration
33%
electrolysis
33%
quantum dots
33%
x radiation
33%
qubits
33%
noise
33%
vertical integration
33%
coolers
33%
design
33%
molybdenum carbides
33%
layers
33%
films
33%
thin films
33%
deposition
33%
tunnel junctions
27%
metals
25%
applications
23%
resonators
22%
bonding
22%
electrodes
22%
thermal conduction
22%
cooling
22%
quantum bits
18%
power
18%
x-ray diffraction
17%
indium
16%
low temperature
16%
semiconductor materials
14%
charges
14%
solutions
14%
oxides
14%
thickness
13%
quality factor
11%
increasing
11%
cables
11%
temperature dependence
11%
compression
11%
Keyphrases
Thermal Resistance
33%
Flip-chip Assembly
33%
Refrigeration
33%
Refrigerator
33%
Superconducting Junction
33%
Performance Limits
33%
Carbide Thin Films
33%
Molybdenum Carbide
33%
Operando Measurements
33%
Atomic Layer Deposition
33%
3D Integration
16%
Superconducting Tunnel Junctions
16%
Energy Efficient
16%
Vanadium
16%
Self-heating Effect
16%
Refrigeration Performance
16%
Tunnel Junction
16%
Deposition Process
16%
Processor chips
16%
Conformality
16%
High-speed Data Transfer
16%
Radio-frequency Cables
16%
Functional Characterization
16%
High Growth Rate
16%
X-ray Photoelectron Spectroscopy
16%
Raman Modes
16%
Diffraction Ray
16%
Complex Structure
16%
Phase Analysis
16%
Semiconductor Devices
16%
Thermal Atomic Layer Deposition
16%
X Ray Diffraction
16%
Leakage Current
16%
Single-stage
16%
Quantum Devices
16%
Superconductivity
16%
Thickness Control
16%
HfO2
16%
Molybdenum Nitride
16%
5-cycle
16%
Metal Carbides
16%
MoCl5
16%
Uniform Control
16%
Approximate Method
16%
Dihydropyrazine
16%
Lieu
16%
Interchip
16%
Functional Properties
16%
High Transparency
16%
Physics
Thermal Resistance
66%
Quantum Technology
56%
Tunnel Junction
50%
Electrochemical Cell
33%
Carbon Dioxide
33%
Multiplexing
33%
Low Noise
33%
Tomography
33%
Optical Control
33%
Quantum Dot
33%
Elastic Scattering
33%
X Ray Scattering
33%
Indium
23%
Optical Fiber
16%
Defects
16%
Quantum Device
16%
Room Temperature
16%
Microfabrication
16%
Conductive Heat Transfer
16%
