INIS
argon
11%
asymmetry
15%
cables
15%
competition
15%
control
46%
critical temperature
15%
cryogenics
46%
data
15%
devices
13%
electronic equipment
15%
fabrication
33%
field effect transistors
46%
films
23%
fluctuations
15%
gallium
11%
graphene
93%
hybrids
15%
hysteresis
31%
interactions
46%
ions
46%
irradiation
46%
josephson junctions
100%
junctions
15%
layers
53%
levels
31%
low temperature
31%
magnetic fields
15%
magnetization
31%
melting
15%
metals
46%
microwave radiation
15%
optical fibers
15%
oxides
46%
polarization
15%
processing
18%
quantum electronics
22%
radiowave radiation
15%
semiconductor materials
46%
superconductivity
53%
superconductors
11%
symmetry breaking
46%
temperature range 0273-0400 k
15%
thermal conduction
15%
thickness
11%
thin films
46%
tin
11%
topology
15%
transition temperature
11%
transport
15%
valleys
15%
Keyphrases
Argon
11%
Complementary Metal Oxide Semiconductor
46%
Correlated Insulator
15%
Current-induced Magnetization Switching
15%
Diode
46%
Electrical Wiring
23%
Electronic Devices
15%
Excessive Heat
23%
Field-effect Transistors
46%
Fill Factor
15%
Fraunhofer Pattern
15%
Gate-tunable
15%
Graphene
46%
Heat Conduction
23%
High Kinetics
11%
High-speed Data Transfer
23%
Homogeneous Films
11%
Insulator
46%
Ion Effect
46%
Ion Irradiation
46%
Josephson
46%
Josephson Arrays
46%
Josephson Junction
53%
Magic-angle Twisted Bilayer Graphene
46%
Magnetic Hysteresis
31%
Magnetic Ordering
15%
Magnetization
15%
MoSi
35%
Normal State Resistivity
11%
Optical Control
46%
Optical Fiber
23%
Phase Shift
15%
Post-processing Techniques
11%
Quantum Electronics
22%
Quantum Technologies
46%
Radio-frequency Cables
23%
Room Temperature
23%
Scaleable
23%
Single Compounds
11%
Superconducting Magnetic
15%
Superconducting Nanowire Single-photon Detector (SNSPD)
11%
Superconducting Thin Films
46%
Superconductivity
46%
Symmetry Breaking
46%
Top Gate
13%
Topological Order
15%
Valley Polarization
15%
Wafer-scale
58%
Weakest Link
15%
Zero Field
15%
Material Science
Complementary Metal-Oxide-Semiconductor Device
46%
Electrical Resistivity
11%
Electronic Circuit
13%
Field Effect Transistors
46%
Film
23%
Gallium
11%
Graphene
93%
Ion Bombardment
46%
Josephson Junction
100%
Nanowires
11%
Superconducting Film
46%
Superconducting Material
11%
Superconductivity
53%
Theoretical Calculation
15%