INIS
acoustics
10%
applications
32%
aspect ratio
16%
cavities
21%
chemical vapor deposition
16%
deposition
14%
devices
50%
etching
60%
fabrication
23%
films
19%
hydrofluoric acid
14%
interfaces
15%
layers
37%
levels
13%
low temperature
10%
manufacturing
18%
mhz range
23%
microelectromechanical systems
10%
noise
22%
oscillators
29%
oxides
24%
patents
11%
plasma
24%
plugs
14%
resonators
60%
silicon
100%
silicon oxides
13%
single crystals
33%
size
12%
stability
12%
substrates
12%
surfaces
12%
transistors
11%
vapors
14%
Keyphrases
Acoustic Mode
15%
Atomic Layer Deposition
11%
Buried Oxide
10%
Deep Silicon Etching
11%
Etching Process
10%
Etching Rate
29%
Extensional Mode
10%
Hydrofluoric Acid
13%
Inductively Coupled Plasma
13%
Low Pressure Chemical Vapor Deposition (LPCVD)
13%
MEMS Devices
17%
Micro-electro-mechanical Systems
10%
Micromechanical Devices
25%
Micromechanical Oscillator
13%
Micromechanical Resonator
21%
Micromechanics
50%
Multicrystalline Silicon
38%
Oxides
11%
Patent Family
14%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
10%
Resonator
43%
Sidewall
10%
Silicon Micromechanical Resonators
16%
Silicon Resonator
22%
Silicon Wafer
10%
Silicon-on-insulator
22%
Silicon-on-insulator Wafer
20%
SOI Wafer
16%
Stiction
15%
Vacuum Cavity
16%
Wafer
14%
Engineering
Aspect Ratio
16%
Atomic Layer Deposition
10%
Capacitive
13%
Etch Rate
25%
Inductively Coupled Plasma
11%
Microelectromechanical System
55%
Oscillator
27%
Resonator
53%
Side Wall
13%
Silicon on Insulator
32%
Silicon Single Crystal
27%
Stiction
13%
