INIS
voltage
100%
nanowires
65%
plates
65%
mosfet
65%
wavelengths
57%
power
57%
devices
56%
breakdown
46%
metals
40%
noise
40%
performance
38%
sensitivity
32%
modeling
32%
readout systems
32%
semiconductor materials
32%
bolometers
32%
incidents
32%
graphene
32%
field effect transistors
32%
oxides
32%
distribution
32%
waveguides
32%
operation
28%
sensors
27%
detection
26%
losses
24%
speed
21%
fabrication
21%
applications
20%
engineering
19%
phonons
16%
beams
16%
gases
14%
range
14%
solutions
14%
charge carriers
13%
penetration depth
13%
bioassay
13%
comparative evaluations
13%
statistics
13%
reliability
13%
layers
12%
films
10%
operational amplifiers
10%
amplifiers
10%
clearance
10%
ge semiconductor detectors
10%
ghz range
10%
hybrids
10%
saturation
10%
Keyphrases
NWFET
65%
Field Plate
65%
Breakdown Voltage
46%
Vertical Nanowire
32%
Order of Magnitude
32%
III-V
32%
Magnitude Change
32%
Performance Analysis
32%
Optical Power
32%
Performance Modeling
32%
Predictable Quantum Efficient Detector
32%
Field-effect Transistor Biosensor
32%
Complementary Metal Oxide Semiconductor
32%
III-V Nanowires
32%
Vertical Heterostructures
32%
Biosensor Array
32%
Infrared Bolometers
32%
Graphene Field-effect Transistor
32%
Thermoelectric
32%
In-situ Graphene
32%
Continuous-variable Quantum Key Distribution
32%
Waveguide Integrated
32%
Transconductance
26%
Biosensing
24%
Carrier Loss
21%
Charge Carriers
21%
Penetration Depth
21%
Drain Regions
17%
Multi-analyte Detection
16%
Long Wavelength
16%
High Saturation Power
16%
Optical Hybrid
16%
Operational Amplifier
16%
Integrated Receiver
16%
Distribution Technology
16%
Ultra-low Loss
16%
Shot Noise
16%
Ge Detector
16%
Monolithically Integrated
16%
Transimpedance Amplifier
16%
Electronic Noise
16%
Thick SOI
16%
Low Noise
16%
SOI Platform
16%
Band-to-band Tunneling
12%
Slope Region
10%
Logarithmic Scale
10%
Voltage Dependence
10%
Low Bias Voltage
10%
Negative Slope
10%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
65%
Breakdown Voltage
65%
Nanowire
65%
Heterojunctions
43%
Engineering
43%
Complementary Metal-Oxide-Semiconductor
32%
FET Biosensor
32%
Graphene
32%
Penetration Depth
32%
Bias Voltage
32%
Optical Power
32%
Thermoelectricity
32%
Charge Carrier
32%
Quantum Cryptography
32%
Continuous Variable
32%
Waveguide
32%
Drain Region
32%
Performance Analysis
32%
Biosensing
26%
Tunnel Construction
21%
Field-Effect Transistor
19%
Depletion Region
16%
Negative Slope
16%
Logarithmic Scale
16%
Photocurrent
16%
Power Level
16%
Photodiode
16%
Shot Noise
16%
Optical Hybrid
16%
Operational Amplifier
16%
Amplifier
16%
Electronic Noise
16%
Impact Ionization
10%
Screening Effect
10%
Sio2 Film
10%
Supply Voltage
10%
Transmission Device
10%
Nanowire Device
10%
Device Performance
10%
Operating Voltage
10%
Device Behavior
10%
Sio2 Layer
10%
Performance Parameter
10%
Electric Field
10%
Channel Region
10%
Source Model
10%
