Sayani Majumdar

Ph. D., Docent (Adj. Prof.)

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Personal profile

Education/Academic qualification

EDUCATION, Doctorate, Jadavpur University

2 Dec 199931 Jan 2004

External positions

Research Fellow, Aalto University

1 Mar 201931 Aug 2020

Docent (Adjunct Professor), University of Turku

11 Aug 2011 → …


  • QC Physics
  • Electronics

Fingerprint Dive into the research topics where Sayani Majumdar is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Thin films Engineering & Materials Science
thin films Physics & Astronomy
Magnetoresistance Engineering & Materials Science
Magnetic fields Chemical Compounds
Magnetization Chemical Compounds
organic semiconductors Physics & Astronomy
magnetic fields Physics & Astronomy
Temperature Engineering & Materials Science

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Research Output 2001 2019

Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor

Tan, H., Majumdar, S., Qin, Q., Lahtinen, J. & van Dijken, S., 26 Jun 2019, In : Advanced Intelligent Systems. 1, 2, p. 1 8 p., 1900036.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
Neurotransmitter Agents
Equipment Design
Equipment and Supplies
2 Citations (Scopus)

Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing

Majumdar, S., Tan, H., Qin, Q. H. & Dijken, S. V., 3 Jan 2019, In : Advanced Electronic Materials. 5, 3, 10 p., 1800795.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
Tunnel junctions
Ferroelectric materials
Neural networks
Unsupervised learning

Crossover from synaptic to neuronal functionalities through carrier concentration control in Nb-doped SrTiO3-based organic ferroelectric tunnel junctions

Majumdar, S., Tan, H., Pande, I. & Van Dijken, S., 1 Sep 2019, In : APL Materials. 7, 9, 091114.

Research output: Contribution to journalArticleScientificpeer-review

Open Access
Tunnel junctions
Ferroelectric materials
Carrier concentration
Charge carriers

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Ambrosi, E., Bartlett, P., Berg, A. I., Brivio, S., Burr, G., Deswal, S., Deuermeier, J., Haga, M. A., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez-Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S. & 18 others, Ielmini, D., Kenyon, A. J., Kolosov, V., Li, Y., Majumdar, S., Milano, G., Prodromakis, T., Raeishosseini, N., Rana, V., Ricciardi, C., Santamaria, M., Shluger, A., Valov, I., Waser, R., Stanley Williams, R., Wouters, D., Yang, Y. & Zaffora, A., 1 Jan 2019, In : Faraday Discussions. 213, p. 115-150 36 p.

Research output: Contribution to journalOther journal contributionScientific

3 Citations (Scopus)

Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF-TrFE)-Based Tunnel Junctions

Majumdar, S., Chen, B., Qin, Q. H., Majumdar, H. S. & van Dijken, S., 2018, In : Advanced Functional Materials. 28, 15, 1703273.

Research output: Contribution to journalArticleScientificpeer-review

Tunnel junctions
tunnel junctions
Ferroelectric materials