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Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 1 Similar Profiles
graphene Physics & Astronomy
photometers Physics & Astronomy
heterojunctions Physics & Astronomy
gallium selenides Physics & Astronomy
heterojunction devices Physics & Astronomy
Frequency stability Engineering & Materials Science
Graphite Chemical Compounds
Boron nitride Engineering & Materials Science

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Research Output 2017 2018

1 Citations

Active synchronization and modulation of fiber lasers with a graphene electro-optic modulator

Li, D., Xue, H., Wang, Y., Qi, M., Kim, W., Li, C., Riikonen, J., Ren, Z., Bai, J., Lipsanen, H. & Sun, Z., 1 Aug 2018, In : Optics Letters. 43, 15, p. 3497-3500 4 p.

Research output: Contribution to journalArticleResearchpeer-review

fiber lasers
1 Citations

A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Xue, H., Wang, Y., Dai, Y., Kim, W., Jussila, H., Qi, M., Susoma, J., Ren, Z., Dai, Q., Zhao, J., Halonen, K., Lipsanen, H., Wang, X., Gan, X. & Sun, Z., 21 Nov 2018, In : Advanced Functional Materials. 28, 47, 1804388.

Research output: Contribution to journalArticleResearchpeer-review


Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Kim, W., Arpiainen, S., Xue, H., Soikkeli, M., Qi, M., Sun, Z., Lipsanen, H., Chaves, F. A., Jiménez, D. & Prunnila, M., 31 Jul 2018, In : ACS Applied Nano Materials. 1, 8, p. 3895–3902 8 p.

Research output: Contribution to journalArticleResearchpeer-review

Open Access
gallium selenides
heterojunction devices
1 Citations

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

Feijoo, P. C., Pasadas, F., Iglesias, J. M., Martin, M. J., Rengel, R., Li, C., Kim, W., Riikonen, J., Lipsanen, H. & Jiménez, D., 6 Nov 2017, In : Nanotechnology. 28, 48, 485203.

Research output: Contribution to journalArticleResearchpeer-review

Frequency stability
Boron nitride
Field effect transistors