Wide Band-Gap Semiconductor Power Electronics

WIBASE forms a 10-partner consortium of companies and research organizations presenting the best expertise in the Finnish semiconductor and power electronics ecosystem. The project focuses on the development of wide band-gap (WBG) semiconductor power device processing, prototyping (inc. integration and packaging), testing capabilities and life-time modelling. The planned work is built on the strengths of the existing national ecosystem: 1) semiconductor substrates, materials and thin films, 2) power electronics end applications and 3) complementary expertise of research organizations.

The consortium covers the full value chain of WBG power electronics from semiconductor materials and components to end applications.
Wl BASE addresses WBG-power device and module reliability concerns, that currently limit the adoption of WBG semiconductor power devices. In addition, the project aims to improve the availability of workforce knowledgeable in WBG power devices. The consortium will work closely with globally leading research groups, involving extensive researcher mobility.

Technology, know-how and IP developed in this project will enable 1) participating power electronics companies to adopt fast new WBG technology, 2) semiconductor companies to address the rapidly growing global WBG power electronics market and 3) participating research organizations to develop globally competitive technology. Overall, the project will form a national expertise cluster on WBG power electronics that will improve the intellectual property stance, self-sufficiency, and component independency of Finnish semiconductor and power electronics industries.

In WIBASE, VTT develops WBG semiconductor simulation, characterization, materials and device technology in collaboration with Finnish semiconductor and power electronics industry. Aim is to cover current expertise gaps on 1) national R&D capabilities on WBG power electronics materials and devices and 2) testing services for WBG power modules.