Abstract
Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.
| Original language | English |
|---|---|
| Article number | 8720175 |
| Pages (from-to) | 1112-1115 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 40 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 22 May 2019 |
| MoE publication type | A1 Journal article-refereed |
Fingerprint
Keywords
- anodization
- indium oxide (InO)
- interface state density
- low voltage
- Metal oxide semiconductors
- solution processing
- TFT
Cite this
}
0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric. / Bhalerao, Sagar R.; Lupo, Donald; Zangiabadi, Amirali; Kymissis, Ioannis; Leppaniemi, Jaakko; Alastalo, Ari; Berger, Paul R.
In: IEEE Electron Device Letters, Vol. 40, No. 7, 8720175, 22.05.2019, p. 1112-1115.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - 0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric
AU - Bhalerao, Sagar R.
AU - Lupo, Donald
AU - Zangiabadi, Amirali
AU - Kymissis, Ioannis
AU - Leppaniemi, Jaakko
AU - Alastalo, Ari
AU - Berger, Paul R.
PY - 2019/5/22
Y1 - 2019/5/22
N2 - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.
AB - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.
KW - anodization
KW - indium oxide (InO)
KW - interface state density
KW - low voltage
KW - Metal oxide semiconductors
KW - solution processing
KW - TFT
UR - http://www.scopus.com/inward/record.url?scp=85068181785&partnerID=8YFLogxK
U2 - 10.1109/LED.2019.2918492
DO - 10.1109/LED.2019.2918492
M3 - Article
VL - 40
SP - 1112
EP - 1115
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
M1 - 8720175
ER -