0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric

Sagar R. Bhalerao; Donald Lupo; Amirali Zangiabadi; Ioannis Kymissis; Jaakko Leppaniemi; Ari Alastalo; Paul R. Berger

doi:10.1109/LED.2019.2918492

0.6V threshold voltage thin film transistors with solution processable indium oxide (In₂O₃) Channel and Anodized High-κ Al₂O₃ Dielectric

Sagar R. Bhalerao^*, Donald Lupo, Amirali Zangiabadi, Ioannis Kymissis, Jaakko Leppaniemi, Ari Alastalo, Paul R. Berger

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

16 Citations (Scopus)

Abstract

Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In₂O₃) and room temperature processed anodized high- κ aluminum oxide (Al₂O₃) for gate dielectrics. The In₂O₃ TFTs operate well below the drain bias (V_ds) of 3.0 V, with on/off ratio 10⁵, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (V_th)~0.6 V. The electron mobility (μ) is as high as 3.53 cm²/V.s in the saturation regime and normalized transconductance (g_m) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (D_it) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 10¹¹ - 2.98 × 10¹¹ eV^-1· cm², signifying acceptable compatibility of In₂O₃ with anodic Al₂O₃.

Original language	English
Article number	8720175
Pages (from-to)	1112-1115
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1109/LED.2019.2918492
Publication status	Published - 22 May 2019
MoE publication type	A1 Journal article-refereed

Funding

Manuscript received April 27, 2019; revised May 16, 2019; accepted May 19, 2019. Date of publication May 22, 2019; date of current version June 26, 2019. This work has been funded by the Business Finland under Grant 40146/14 and the Academy of Finland under Grant 311458. The review of this letter was arranged by Editor Z. Ma. (Corresponding author: Sagar R. Bhalerao.) S. R. Bhalerao and D. Lupo are with the Electrical Engineering, FI Tampere University, 33720 Tampere, Finland (e-mail: sagar.bhalerao@ tuni.fi).

Keywords

anodization
indium oxide (InO)
interface state density
low voltage
Metal oxide semiconductors
solution processing
TFT

Access to Document

10.1109/LED.2019.2918492

Cite this

@article{fe30b18ba42140cebf9d83929e37ca28,

title = "0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric",

abstract = "Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.",

keywords = "anodization, indium oxide (InO), interface state density, low voltage, Metal oxide semiconductors, solution processing, TFT",

author = "Bhalerao, {Sagar R.} and Donald Lupo and Amirali Zangiabadi and Ioannis Kymissis and Jaakko Leppaniemi and Ari Alastalo and Berger, {Paul R.}",

year = "2019",

month = may,

day = "22",

doi = "10.1109/LED.2019.2918492",

language = "English",

volume = "40",

pages = "1112--1115",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "7",

}

TY - JOUR

T1 - 0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric

AU - Bhalerao, Sagar R.

AU - Lupo, Donald

AU - Zangiabadi, Amirali

AU - Kymissis, Ioannis

AU - Leppaniemi, Jaakko

AU - Alastalo, Ari

AU - Berger, Paul R.

PY - 2019/5/22

Y1 - 2019/5/22

N2 - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.

AB - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.

KW - anodization

KW - indium oxide (InO)

KW - interface state density

KW - low voltage

KW - Metal oxide semiconductors

KW - solution processing

KW - TFT

UR - http://www.scopus.com/inward/record.url?scp=85068181785&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2918492

DO - 10.1109/LED.2019.2918492

M3 - Article

AN - SCOPUS:85068181785

SN - 0741-3106

VL - 40

SP - 1112

EP - 1115

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 8720175

ER -