Abstract
Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.
Original language | English |
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Article number | 8720175 |
Pages (from-to) | 1112-1115 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 40 |
Issue number | 7 |
DOIs | |
Publication status | Published - 22 May 2019 |
MoE publication type | A1 Journal article-refereed |
Funding
Manuscript received April 27, 2019; revised May 16, 2019; accepted May 19, 2019. Date of publication May 22, 2019; date of current version June 26, 2019. This work has been funded by the Business Finland under Grant 40146/14 and the Academy of Finland under Grant 311458. The review of this letter was arranged by Editor Z. Ma. (Corresponding author: Sagar R. Bhalerao.) S. R. Bhalerao and D. Lupo are with the Electrical Engineering, FI Tampere University, 33720 Tampere, Finland (e-mail: sagar.bhalerao@ tuni.fi).
Keywords
- anodization
- indium oxide (InO)
- interface state density
- low voltage
- Metal oxide semiconductors
- solution processing
- TFT