Engineering
Metal Oxide
100%
Temperature
33%
Processing
33%
Interface Trap
33%
Capacitance
16%
Aluminum Oxide (al2o3)
16%
Electric Potential
16%
Compatibility
16%
Room Temperature
16%
Hysteresis
16%
Gate Dielectric
16%
Operating Voltage
16%
Determines
16%
Density
16%
Low Voltage
16%
Drain Bias
16%
Physics
Indium Oxides
33%
Threshold Voltage
33%
Temperature
33%
Electric Potential
16%
Hysteresis
16%
Dielectrics
16%
Capacitance
16%
Room Temperature
16%
Electron Mobility
16%
Ratios
16%
Chemistry
Aqueous Solution
33%
Reaction Temperature
33%
Voltage
16%
Hysteresis
16%
Dielectric Material
16%
Transconductance
16%
Trap Density Measurement
16%
Analytical Method
16%
Density
16%
Ambient Reaction Temperature
16%
Electron Mobility
16%
Material Science
Al2O3
33%
Thin-Film Transistor
33%
Solution
33%
Oxide Semiconductor
33%
Dielectric Material
16%
Electron Mobility
16%
Thin Film Transistor
16%
Computer Science
Threshold Voltage
33%
Room Temperature
16%
Channels
16%