0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric

Sagar R. Bhalerao, Donald Lupo, Amirali Zangiabadi, Ioannis Kymissis, Jaakko Leppaniemi, Ari Alastalo, Paul R. Berger

    Research output: Contribution to journal › Article › Scientific › peer-review

    10 Citations (Scopus)

    Fingerprint

    Dive into the research topics of '0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric'. Together they form a unique fingerprint.

    Material Science