100 GHz Push-Push Oscillator in 90 nm CMOS Technology

Timo Karttaavi, Jan Holmberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)

    Abstract

    A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits ƒ{3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is ƒ{85 dBc/Hz at 1 MHz offset. Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.
    Original languageEnglish
    Title of host publicationProceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007
    Pages112-114
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA4 Article in a conference publication
    Event2nd European Microwave Integrated Circuits Conference, EuMIC 2007 - Munich, Germany
    Duration: 8 Oct 200710 Oct 2007

    Conference

    Conference2nd European Microwave Integrated Circuits Conference, EuMIC 2007
    Abbreviated titleEuMIC 2007
    CountryGermany
    CityMunich
    Period8/10/0710/10/07

    Fingerprint

    Phase noise
    Resonators
    Electric lines
    Electric power utilization
    Capacitors

    Cite this

    Karttaavi, T., & Holmberg, J. (2007). 100 GHz Push-Push Oscillator in 90 nm CMOS Technology. In Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007 (pp. 112-114) https://doi.org/0.1109/EMICC.2007.4412660
    Karttaavi, Timo ; Holmberg, Jan. / 100 GHz Push-Push Oscillator in 90 nm CMOS Technology. Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. 2007. pp. 112-114
    @inproceedings{6e0cce2f50cb4743825fc30a24fbf1f5,
    title = "100 GHz Push-Push Oscillator in 90 nm CMOS Technology",
    abstract = "A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits ƒ{3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is ƒ{85 dBc/Hz at 1 MHz offset. Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.",
    author = "Timo Karttaavi and Jan Holmberg",
    year = "2007",
    doi = "0.1109/EMICC.2007.4412660",
    language = "English",
    isbn = "978-2-87487-002-6",
    pages = "112--114",
    booktitle = "Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007",

    }

    Karttaavi, T & Holmberg, J 2007, 100 GHz Push-Push Oscillator in 90 nm CMOS Technology. in Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. pp. 112-114, 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Munich, Germany, 8/10/07. https://doi.org/0.1109/EMICC.2007.4412660

    100 GHz Push-Push Oscillator in 90 nm CMOS Technology. / Karttaavi, Timo; Holmberg, Jan.

    Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. 2007. p. 112-114.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - 100 GHz Push-Push Oscillator in 90 nm CMOS Technology

    AU - Karttaavi, Timo

    AU - Holmberg, Jan

    PY - 2007

    Y1 - 2007

    N2 - A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits ƒ{3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is ƒ{85 dBc/Hz at 1 MHz offset. Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.

    AB - A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits ƒ{3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is ƒ{85 dBc/Hz at 1 MHz offset. Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.

    U2 - 0.1109/EMICC.2007.4412660

    DO - 0.1109/EMICC.2007.4412660

    M3 - Conference article in proceedings

    SN - 978-2-87487-002-6

    SP - 112

    EP - 114

    BT - Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

    ER -

    Karttaavi T, Holmberg J. 100 GHz Push-Push Oscillator in 90 nm CMOS Technology. In Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. 2007. p. 112-114 https://doi.org/0.1109/EMICC.2007.4412660