100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Dimitra G. Georgiadou; James Semple; Abhay A. Sagade; Henrik Forstén; Pekka Rantakari; Yen Hung Lin; Feras Alkhalil; Akmaral Seitkhan; Kalaivanan Loganathan; Hendrik Faber; Thomas D. Anthopoulos

doi:10.1038/s41928-020-00484-7

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Dimitra G. Georgiadou^*
, James Semple
, Abhay A. Sagade
, Henrik Forstén
, Pekka Rantakari
, Yen Hung Lin
, Feras Alkhalil
, Akmaral Seitkhan
, Kalaivanan Loganathan
, Hendrik Faber
, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Imperial College London
University of Southampton
SRM University
University of Oxford
PragmatIC
King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › Scientific › peer-review

83 Citations (Scopus)

Abstract

Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

Original language	English
Pages (from-to)	718-725
Journal	Nature Electronics
Volume	3
DOIs	https://doi.org/10.1038/s41928-020-00484-7
Publication status	Published - Nov 2020
MoE publication type	A1 Journal article-refereed

Funding

D.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/ CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Access to Document

10.1038/s41928-020-00484-7

Cite this

@article{d72d7bf07a5e4b5e8a1b51e9cd4ac2ec,

title = "100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale",

abstract = "Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.",

author = "Georgiadou, \{Dimitra G.\} and James Semple and Sagade, \{Abhay A.\} and Henrik Forst{\'e}n and Pekka Rantakari and Lin, \{Yen Hung\} and Feras Alkhalil and Akmaral Seitkhan and Kalaivanan Loganathan and Hendrik Faber and Anthopoulos, \{Thomas D.\}",

year = "2020",

month = nov,

doi = "10.1038/s41928-020-00484-7",

language = "English",

volume = "3",

pages = "718--725",

journal = "Nature Electronics",

issn = "2520-1131",

publisher = "Springer Nature",

}

TY - JOUR

T1 - 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

AU - Georgiadou, Dimitra G.

AU - Semple, James

AU - Sagade, Abhay A.

AU - Forstén, Henrik

AU - Rantakari, Pekka

AU - Lin, Yen Hung

AU - Alkhalil, Feras

AU - Seitkhan, Akmaral

AU - Loganathan, Kalaivanan

AU - Faber, Hendrik

AU - Anthopoulos, Thomas D.

PY - 2020/11

Y1 - 2020/11

N2 - Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

AB - Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

UR - https://www.scopus.com/pages/publications/85092725771

U2 - 10.1038/s41928-020-00484-7

DO - 10.1038/s41928-020-00484-7

M3 - Article

AN - SCOPUS:85092725771

SN - 2520-1131

VL - 3

SP - 718

EP - 725

JO - Nature Electronics

JF - Nature Electronics

ER -

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Abstract

Funding

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this