1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics

Jukka Viheriälä, Heidi Tuorila, Nouman Zia, Matteo Cherchi, Timo Aalto, Mircea Guina

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.
Original languageEnglish
Title of host publicationSilicon Photonics XIV
EditorsGraham T. Reed, Andrew P. Knights
PublisherInternational Society for Optics and Photonics SPIE
Number of pages7
ISBN (Print)978-1-5106-2488-7
DOIs
Publication statusPublished - 4 Mar 2019
MoE publication typeA4 Article in a conference publication
EventSilicon Photonics XIV, SPIE OPTO 2019 - San Francisco, United States
Duration: 2 Feb 20197 Feb 2019

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10923
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSilicon Photonics XIV, SPIE OPTO 2019
Abbreviated titleSPIE OPTO 2019
CountryUnited States
CitySan Francisco
Period2/02/197/02/19

Fingerprint

traveling waves
U bends
photonics
silicon
light amplifiers
flat surfaces
semiconductor lasers
diodes
chips
insulators
fabrication
radii
geometry

Keywords

  • hybrid integration
  • III-V
  • semiconductor optical amplifiers
  • silicon-on-insulator
  • coupling losses

Cite this

Viheriälä, J., Tuorila, H., Zia, N., Cherchi, M., Aalto, T., & Guina, M. (2019). 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. In G. T. Reed, & A. P. Knights (Eds.), Silicon Photonics XIV [109230E] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 10923 https://doi.org/10.1117/12.2505935
Viheriälä, Jukka ; Tuorila, Heidi ; Zia, Nouman ; Cherchi, Matteo ; Aalto, Timo ; Guina, Mircea. / 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. Silicon Photonics XIV. editor / Graham T. Reed ; Andrew P. Knights. International Society for Optics and Photonics SPIE, 2019. (Proceedings of SPIE, Vol. 10923).
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Viheriälä, J, Tuorila, H, Zia, N, Cherchi, M, Aalto, T & Guina, M 2019, 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. in GT Reed & AP Knights (eds), Silicon Photonics XIV., 109230E, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 10923, Silicon Photonics XIV, SPIE OPTO 2019, San Francisco, United States, 2/02/19. https://doi.org/10.1117/12.2505935

1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. / Viheriälä, Jukka; Tuorila, Heidi; Zia, Nouman; Cherchi, Matteo; Aalto, Timo; Guina, Mircea.

Silicon Photonics XIV. ed. / Graham T. Reed; Andrew P. Knights. International Society for Optics and Photonics SPIE, 2019. 109230E (Proceedings of SPIE, Vol. 10923).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.

AB - We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.

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Viheriälä J, Tuorila H, Zia N, Cherchi M, Aalto T, Guina M. 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. In Reed GT, Knights AP, editors, Silicon Photonics XIV. International Society for Optics and Photonics SPIE. 2019. 109230E. (Proceedings of SPIE, Vol. 10923). https://doi.org/10.1117/12.2505935