1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics

Jukka Viheriälä, Heidi Tuorila, Nouman Zia, Matteo Cherchi, Timo Aalto, Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.
    Original languageEnglish
    Title of host publicationSilicon Photonics XIV
    EditorsGraham T. Reed, Andrew P. Knights
    PublisherInternational Society for Optics and Photonics SPIE
    Number of pages7
    ISBN (Print)978-1-5106-2488-7
    DOIs
    Publication statusPublished - 4 Mar 2019
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics XIV, SPIE OPTO 2019 - San Francisco, United States
    Duration: 2 Feb 20197 Feb 2019

    Publication series

    SeriesProceedings of SPIE
    Volume10923
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics XIV, SPIE OPTO 2019
    Abbreviated titleSPIE OPTO 2019
    CountryUnited States
    CitySan Francisco
    Period2/02/197/02/19

    Fingerprint

    traveling waves
    U bends
    photonics
    silicon
    light amplifiers
    flat surfaces
    semiconductor lasers
    diodes
    chips
    insulators
    fabrication
    radii
    geometry

    Keywords

    • hybrid integration
    • III-V
    • semiconductor optical amplifiers
    • silicon-on-insulator
    • coupling losses

    Cite this

    Viheriälä, J., Tuorila, H., Zia, N., Cherchi, M., Aalto, T., & Guina, M. (2019). 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. In G. T. Reed, & A. P. Knights (Eds.), Silicon Photonics XIV [109230E] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 10923 https://doi.org/10.1117/12.2505935
    Viheriälä, Jukka ; Tuorila, Heidi ; Zia, Nouman ; Cherchi, Matteo ; Aalto, Timo ; Guina, Mircea. / 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. Silicon Photonics XIV. editor / Graham T. Reed ; Andrew P. Knights. International Society for Optics and Photonics SPIE, 2019. (Proceedings of SPIE, Vol. 10923).
    @inproceedings{19591f0099804b8f82082dcc4ee5be51,
    title = "1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics",
    abstract = "We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100{\%}. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.",
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    author = "Jukka Viheri{\"a}l{\"a} and Heidi Tuorila and Nouman Zia and Matteo Cherchi and Timo Aalto and Mircea Guina",
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    Viheriälä, J, Tuorila, H, Zia, N, Cherchi, M, Aalto, T & Guina, M 2019, 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. in GT Reed & AP Knights (eds), Silicon Photonics XIV., 109230E, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 10923, Silicon Photonics XIV, SPIE OPTO 2019, San Francisco, United States, 2/02/19. https://doi.org/10.1117/12.2505935

    1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. / Viheriälä, Jukka; Tuorila, Heidi; Zia, Nouman; Cherchi, Matteo; Aalto, Timo; Guina, Mircea.

    Silicon Photonics XIV. ed. / Graham T. Reed; Andrew P. Knights. International Society for Optics and Photonics SPIE, 2019. 109230E (Proceedings of SPIE, Vol. 10923).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Viheriälä, Jukka

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    AU - Zia, Nouman

    AU - Cherchi, Matteo

    AU - Aalto, Timo

    AU - Guina, Mircea

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    N2 - We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.

    AB - We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.

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    KW - semiconductor optical amplifiers

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    Viheriälä J, Tuorila H, Zia N, Cherchi M, Aalto T, Guina M. 1.3μm u-bend traveling wave SOA devices for high efficiency coupling to silicon photonics. In Reed GT, Knights AP, editors, Silicon Photonics XIV. International Society for Optics and Photonics SPIE. 2019. 109230E. (Proceedings of SPIE, Vol. 10923). https://doi.org/10.1117/12.2505935