14 MHz micromechanical oscillator

Tomi Mattila (Corresponding Author), Olli Jaakkola, Jyrki Kiihamäki, Jani Karttunen, Tuomas Lamminmäki, P. Rantakari, Aarne Oja, Heikki Seppä, Hannu Kattelus, Ilkka Tittonen

Research output: Contribution to journalArticleScientificpeer-review

41 Citations (Scopus)

Abstract

Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.
Original languageEnglish
Pages (from-to)497-502
JournalSensors and Actuators A: Physical
Volume97-98
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Spurious signal noise
Quartz
Silicon
Resonators
oscillators
Single crystals
Electrodes
quartz
amplifiers
resonators
electrodes
single crystals
silicon

Keywords

  • micromechanical oscillators
  • oscillator noise

Cite this

Mattila, T., Jaakkola, O., Kiihamäki, J., Karttunen, J., Lamminmäki, T., Rantakari, P., ... Tittonen, I. (2002). 14 MHz micromechanical oscillator. Sensors and Actuators A: Physical, 97-98, 497-502. https://doi.org/10.1016/S0924-4247(01)00813-5
Mattila, Tomi ; Jaakkola, Olli ; Kiihamäki, Jyrki ; Karttunen, Jani ; Lamminmäki, Tuomas ; Rantakari, P. ; Oja, Aarne ; Seppä, Heikki ; Kattelus, Hannu ; Tittonen, Ilkka. / 14 MHz micromechanical oscillator. In: Sensors and Actuators A: Physical. 2002 ; Vol. 97-98. pp. 497-502.
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abstract = "Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.",
keywords = "micromechanical oscillators, oscillator noise",
author = "Tomi Mattila and Olli Jaakkola and Jyrki Kiiham{\"a}ki and Jani Karttunen and Tuomas Lamminm{\"a}ki and P. Rantakari and Aarne Oja and Heikki Sepp{\"a} and Hannu Kattelus and Ilkka Tittonen",
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Mattila, T, Jaakkola, O, Kiihamäki, J, Karttunen, J, Lamminmäki, T, Rantakari, P, Oja, A, Seppä, H, Kattelus, H & Tittonen, I 2002, '14 MHz micromechanical oscillator', Sensors and Actuators A: Physical, vol. 97-98, pp. 497-502. https://doi.org/10.1016/S0924-4247(01)00813-5

14 MHz micromechanical oscillator. / Mattila, Tomi (Corresponding Author); Jaakkola, Olli; Kiihamäki, Jyrki; Karttunen, Jani; Lamminmäki, Tuomas; Rantakari, P.; Oja, Aarne; Seppä, Heikki; Kattelus, Hannu; Tittonen, Ilkka.

In: Sensors and Actuators A: Physical, Vol. 97-98, 2002, p. 497-502.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - 14 MHz micromechanical oscillator

AU - Mattila, Tomi

AU - Jaakkola, Olli

AU - Kiihamäki, Jyrki

AU - Karttunen, Jani

AU - Lamminmäki, Tuomas

AU - Rantakari, P.

AU - Oja, Aarne

AU - Seppä, Heikki

AU - Kattelus, Hannu

AU - Tittonen, Ilkka

PY - 2002

Y1 - 2002

N2 - Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.

AB - Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.

KW - micromechanical oscillators

KW - oscillator noise

U2 - 10.1016/S0924-4247(01)00813-5

DO - 10.1016/S0924-4247(01)00813-5

M3 - Article

VL - 97-98

SP - 497

EP - 502

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

SN - 0924-4247

ER -