Abstract
Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.
Original language | English |
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Pages (from-to) | 497-502 |
Journal | Sensors and Actuators A: Physical |
Volume | 97-98 |
DOIs | |
Publication status | Published - 2002 |
MoE publication type | A1 Journal article-refereed |
Keywords
- micromechanical oscillators
- oscillator noise