14 MHz micromechanical oscillator

Tomi Mattila; Olli Jaakkola; Jyrki Kiihamäki; Jani Karttunen; Tuomas Lamminmäki; P. Rantakari; Aarne Oja; Heikki Seppä; Hannu Kattelus; Ilkka Tittonen

doi:10.1016/S0924-4247(01)00813-5

14 MHz micromechanical oscillator

Tomi Mattila^*
, Olli Jaakkola
, Jyrki Kiihamäki
, Jani Karttunen
, Tuomas Lamminmäki
, P. Rantakari
, Aarne Oja
, Heikki Seppä
, Hannu Kattelus
, Ilkka Tittonen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

44 Citations (Scopus)

Abstract

Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.

Original language	English
Pages (from-to)	497-502
Journal	Sensors and Actuators A: Physical
Volume	97-98
DOIs	https://doi.org/10.1016/S0924-4247(01)00813-5
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

micromechanical oscillators
oscillator noise

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10.1016/S0924-4247(01)00813-5

Cite this

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title = "14 MHz micromechanical oscillator",

abstract = "Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.",

keywords = "micromechanical oscillators, oscillator noise",

author = "Tomi Mattila and Olli Jaakkola and Jyrki Kiiham{\"a}ki and Jani Karttunen and Tuomas Lamminm{\"a}ki and P. Rantakari and Aarne Oja and Heikki Sepp{\"a} and Hannu Kattelus and Ilkka Tittonen",

year = "2002",

doi = "10.1016/S0924-4247(01)00813-5",

language = "English",

volume = "97-98",

pages = "497--502",

journal = "Sensors and Actuators A: Physical",

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TY - JOUR

T1 - 14 MHz micromechanical oscillator

AU - Mattila, Tomi

AU - Jaakkola, Olli

AU - Kiihamäki, Jyrki

AU - Karttunen, Jani

AU - Lamminmäki, Tuomas

AU - Rantakari, P.

AU - Oja, Aarne

AU - Seppä, Heikki

AU - Kattelus, Hannu

AU - Tittonen, Ilkka

PY - 2002

Y1 - 2002

N2 - Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.

AB - Operation of a 14 MHz micromechanical oscillator is demonstrated and analyzed. Single-crystal silicon microbridge with submicron electrode gaps is utilized as the resonator element. The oscillator shows a noise floor of −120 dBc/Hz and a near-carrier noise of −105 dBc/Hz at 1 kHz offset. The oscillator noise is dominated by amplifier noise. By comparing the oscillator performance with conventional quartz oscillators, advantages and limitations of the micromechanical components in rf-technology are discussed.

KW - micromechanical oscillators

KW - oscillator noise

U2 - 10.1016/S0924-4247(01)00813-5

DO - 10.1016/S0924-4247(01)00813-5

M3 - Article

SN - 0924-4247

VL - 97-98

SP - 497

EP - 502

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

ER -

14 MHz micromechanical oscillator

Abstract

Keywords

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