1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology

Esa Tarvainen; Hannu Ronkainen; Hannu Kattelus; Tarja Riihisaari; Pekka Kuivalainen

doi:10.1049/el:19960974

1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.

Original language	English
Pages (from-to)	1465-1467
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	16
DOIs	https://doi.org/10.1049/el:19960974
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

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Tarvainen, E., Ronkainen, H., Kattelus, H., Riihisaari, T., & Kuivalainen, P. (1996). 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology. Electronics Letters, 32(16), 1465-1467. https://doi.org/10.1049/el:19960974

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abstract = "On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.",

author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",

note = "Project code: E5SU00128",

year = "1996",

doi = "10.1049/el:19960974",

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T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Riihisaari, Tarja

AU - Kuivalainen, Pekka

N1 - Project code: E5SU00128

PY - 1996

Y1 - 1996

N2 - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.

AB - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.

U2 - 10.1049/el:19960974

DO - 10.1049/el:19960974

M3 - Article

VL - 32

SP - 1465

EP - 1467

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -

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10.1049/el:19960974