Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 1465-1467 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 32 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1996 |
| MoE publication type | A1 Journal article-refereed |
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1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.
In: Electronics Letters, Vol. 32, No. 16, 1996, p. 1465-1467.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology
AU - Tarvainen, Esa
AU - Ronkainen, Hannu
AU - Kattelus, Hannu
AU - Riihisaari, Tarja
AU - Kuivalainen, Pekka
N1 - Project code: E5SU00128
PY - 1996
Y1 - 1996
N2 - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.
AB - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.
U2 - 10.1049/el:19960974
DO - 10.1049/el:19960974
M3 - Article
VL - 32
SP - 1465
EP - 1467
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 16
ER -