1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

    Research output: Contribution to journal › Article › Scientific › peer-review

    Abstract

    On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.
    Original languageEnglish
    Pages (from-to)1465-1467
    Number of pages3
    JournalElectronics Letters
    Volume32
    Issue number16
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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    Bipolar transistors
    Phase noise
    Energy dissipation
    Capacitors
    Tuning

    Cite this

    Tarvainen, Esa ; Ronkainen, Hannu ; Kattelus, Hannu ; Riihisaari, Tarja ; Kuivalainen, Pekka. / 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology. In: Electronics Letters. 1996 ; Vol. 32, No. 16. pp. 1465-1467.
    @article{4757b6cf9695408589ab33f20b5981cf,
    title = "1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology",
    abstract = "On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.",
    author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",
    note = "Project code: E5SU00128",
    year = "1996",
    doi = "10.1049/el:19960974",
    language = "English",
    volume = "32",
    pages = "1465--1467",
    journal = "Electronics Letters",
    issn = "0013-5194",
    publisher = "Institution of Engineering and Technology IET",
    number = "16",

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    Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T & Kuivalainen, P 1996, '1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology', Electronics Letters, vol. 32, no. 16, pp. 1465-1467. https://doi.org/10.1049/el:19960974

    1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.

    In: Electronics Letters, Vol. 32, No. 16, 1996, p. 1465-1467.

    Research output: Contribution to journal › Article › Scientific › peer-review

    TY - JOUR

    T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology

    AU - Tarvainen, Esa

    AU - Ronkainen, Hannu

    AU - Kattelus, Hannu

    AU - Riihisaari, Tarja

    AU - Kuivalainen, Pekka

    N1 - Project code: E5SU00128

    PY - 1996

    Y1 - 1996

    N2 - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.

    AB - On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset.

    U2 - 10.1049/el:19960974

    DO - 10.1049/el:19960974

    M3 - Article

    VL - 32

    SP - 1465

    EP - 1467

    JO - Electronics Letters

    JF - Electronics Letters

    SN - 0013-5194

    IS - 16

    ER -

    Tarvainen E, Ronkainen H, Kattelus H, Riihisaari T, Kuivalainen P. 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 /spl mu/m BiCMos technology. Electronics Letters. 1996;32(16):1465-1467. https://doi.org/10.1049/el:19960974

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