1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

Esa Tarvainen; Hannu Ronkainen; Hannu Kattelus; Tarja Riihisaari; Pekka Kuivalainen

doi:10.1049/el_19960974

1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

Original language	English
Pages (from-to)	1465-1467
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	16
DOIs	https://doi.org/10.1049/el_19960974
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Access to Document

10.1049/el_19960974

Cite this

@article{087c5870d6cb4e31bb7b786bd09eebb4,

title = "1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology",

abstract = "On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.",

author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",

year = "1996",

doi = "10.1049/el_19960974",

language = "English",

volume = "32",

pages = "1465--1467",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "16",

}

TY - JOUR

T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Riihisaari, Tarja

AU - Kuivalainen, Pekka

PY - 1996

Y1 - 1996

N2 - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

AB - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

U2 - 10.1049/el_19960974

DO - 10.1049/el_19960974

M3 - Article

SN - 0013-5194

VL - 32

SP - 1465

EP - 1467

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

Abstract

Access to Document

Fingerprint

Cite this