1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.
    Original languageEnglish
    Pages (from-to)1465-1467
    Number of pages3
    JournalElectronics Letters
    Volume32
    Issue number16
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    BiCMOS technology
    Bipolar transistors
    Phase noise
    Energy dissipation
    Capacitors
    Tuning

    Cite this

    Tarvainen, Esa ; Ronkainen, Hannu ; Kattelus, Hannu ; Riihisaari, Tarja ; Kuivalainen, Pekka. / 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology. In: Electronics Letters. 1996 ; Vol. 32, No. 16. pp. 1465-1467.
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    abstract = "On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.",
    author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",
    year = "1996",
    doi = "10.1049/el_19960974",
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    1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.

    In: Electronics Letters, Vol. 32, No. 16, 1996, p. 1465-1467.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

    AU - Tarvainen, Esa

    AU - Ronkainen, Hannu

    AU - Kattelus, Hannu

    AU - Riihisaari, Tarja

    AU - Kuivalainen, Pekka

    PY - 1996

    Y1 - 1996

    N2 - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

    AB - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

    U2 - 10.1049/el_19960974

    DO - 10.1049/el_19960974

    M3 - Article

    VL - 32

    SP - 1465

    EP - 1467

    JO - Electronics Letters

    JF - Electronics Letters

    SN - 0013-5194

    IS - 16

    ER -