1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

Esa Tarvainen, Hannu Ronkainen, Hannu Kattelus, Tarja Riihisaari, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.
Original languageEnglish
Pages (from-to)1465-1467
Number of pages3
JournalElectronics Letters
Volume32
Issue number16
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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BiCMOS technology
Bipolar transistors
Phase noise
Energy dissipation
Capacitors
Tuning

Cite this

Tarvainen, Esa ; Ronkainen, Hannu ; Kattelus, Hannu ; Riihisaari, Tarja ; Kuivalainen, Pekka. / 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology. In: Electronics Letters. 1996 ; Vol. 32, No. 16. pp. 1465-1467.
@article{087c5870d6cb4e31bb7b786bd09eebb4,
title = "1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology",
abstract = "On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.",
author = "Esa Tarvainen and Hannu Ronkainen and Hannu Kattelus and Tarja Riihisaari and Pekka Kuivalainen",
year = "1996",
doi = "10.1049/el_19960974",
language = "English",
volume = "32",
pages = "1465--1467",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology IET",
number = "16",

}

1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology. / Tarvainen, Esa; Ronkainen, Hannu; Kattelus, Hannu; Riihisaari, Tarja; Kuivalainen, Pekka.

In: Electronics Letters, Vol. 32, No. 16, 1996, p. 1465-1467.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - 1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 µm BiCMOS technology

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Riihisaari, Tarja

AU - Kuivalainen, Pekka

PY - 1996

Y1 - 1996

N2 - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

AB - On-chip planar inductors and 18 GHz npn bipolar transistors are used to implement a simple monolothic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is –85 dBc/Hz at 100 kHz offset.

U2 - 10.1049/el_19960974

DO - 10.1049/el_19960974

M3 - Article

VL - 32

SP - 1465

EP - 1467

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -