2-D modeling of laterally acoustically coupled thin film bulk acoustic wave resonator filters

Tuomas Pensala, Johanna Meltaus, K. Kokkonen, Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on solution and superposition of lateral eigenmodes and eigenfrequencies in a structure consisting of adjacent regions with known plate wave dispersion properties. Mechanical and electrical response of the device are calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Exemplary cases are simulated to show the usefulness of the model in the study of the basic design rules of laterally coupled thin film BAW resonator filters. Model predictions are compared to an experimental 1.9-GHz band-pass filter based on aluminum nitride thin film technology and lateral acoustical coupling. Good agreement is obtained in prediction of passband behavior. The eigenmode-based model forms a useful tool for fast simulation of laterally coupled acoustic devices. It allows one to gain insight into basic device physics in a very intuitive fashion compared with more detailed but heavier finite element method. Shortcomings of this model and possible improvements are discussed.
    Original languageEnglish
    Pages (from-to)2537-2549
    Number of pages13
    JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
    Volume57
    Issue number11
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

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