250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik, Ahamed Raju, Mikko Varonen, Md Najmussadat, Kari A.I. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)


    This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

    Original languageEnglish
    Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages3
    ISBN (Electronic)978-2-87487-060-6
    ISBN (Print)978-1-7281-7040-4
    Publication statusPublished - Jan 2021
    MoE publication typeA4 Article in a conference publication
    Event15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
    Duration: 11 Jan 202112 Jan 2021


    Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020


    • 250GHz
    • millimeter-wave
    • reverse-saturation
    • SiGe
    • Silicon-Germanium
    • SPDT


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