250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik, Ahamed Raju, Mikko Varonen, Md Najmussadat, Kari A.I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

Original languageEnglish
Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages289-291
Number of pages3
ISBN (Electronic)978-2-87487-060-6
ISBN (Print)978-1-7281-7040-4
Publication statusPublished - Jan 2021
MoE publication typeA4 Article in a conference publication
Event15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
Duration: 11 Jan 202112 Jan 2021

Conference

Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020
Country/TerritoryNetherlands
CityUtrecht
Period11/01/2112/01/21

Keywords

  • 250GHz
  • millimeter-wave
  • reverse-saturation
  • SiGe
  • Silicon-Germanium
  • SPDT

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