250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik; Ahamed Raju; Mikko Varonen; Md Najmussadat; Kari A.I. Halonen

250 GHz SiGe SPDT Resonator Switch

Yehia Tawfik^*, Ahamed Raju, Mikko Varonen, Md Najmussadat, Kari A.I. Halonen

^*Corresponding author for this work

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

Original language	English
Title of host publication	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	289-291
Number of pages	3
ISBN (Electronic)	978-2-87487-060-6
ISBN (Print)	978-1-7281-7040-4
Publication status	Published - Jan 2021
MoE publication type	A4 Article in a conference publication
Event	15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands Duration: 11 Jan 2021 → 12 Jan 2021

Conference

Conference	15th European Microwave Integrated Circuits Conference, EuMIC 2020
Country/Territory	Netherlands
City	Utrecht
Period	11/01/21 → 12/01/21

Keywords

250GHz
millimeter-wave
reverse-saturation
SiGe
Silicon-Germanium
SPDT

Access to Document

https://ieeexplore.ieee.org/document/9337419

Cite this

@inproceedings{223399b2fe6d4fdba6e041b3f21307a2,

title = "250 GHz SiGe SPDT Resonator Switch",

abstract = "This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.",

keywords = "250GHz, millimeter-wave, reverse-saturation, SiGe, Silicon-Germanium, SPDT",

author = "Yehia Tawfik and Ahamed Raju and Mikko Varonen and Md Najmussadat and Halonen, {Kari A.I.}",

note = "Funding Information: The authors would like to thank Academy of Finland for supporting this work through Millirad and TeraCom projects. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: {\textcopyright} 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 15th European Microwave Integrated Circuits Conference, EuMIC 2020 ; Conference date: 11-01-2021 Through 12-01-2021",

year = "2021",

month = jan,

language = "English",

isbn = "978-1-7281-7040-4",

pages = "289--291",

booktitle = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Tawfik, Y, Raju, A, Varonen, M, Najmussadat, M & Halonen, KAI 2021, 250 GHz SiGe SPDT Resonator Switch. in EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference., 9337419, IEEE Institute of Electrical and Electronic Engineers, pp. 289-291, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21. <https://ieeexplore.ieee.org/document/9337419>

250 GHz SiGe SPDT Resonator Switch. / Tawfik, Yehia; Raju, Ahamed; Varonen, Mikko et al.
EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. IEEE Institute of Electrical and Electronic Engineers, 2021. p. 289-291 9337419.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - 250 GHz SiGe SPDT Resonator Switch

AU - Tawfik, Yehia

AU - Raju, Ahamed

AU - Varonen, Mikko

AU - Najmussadat, Md

AU - Halonen, Kari A.I.

N1 - Funding Information: The authors would like to thank Academy of Finland for supporting this work through Millirad and TeraCom projects. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: © 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1

Y1 - 2021/1

N2 - This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

AB - This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isolation of 29 dB and minimum input and output reflection coefficient of 16 dB and 20 dB, respectively. The resonator utilizes reverse saturated HBTs.

KW - 250GHz

KW - millimeter-wave

KW - reverse-saturation

KW - SiGe

KW - Silicon-Germanium

KW - SPDT

UR - http://www.scopus.com/inward/record.url?scp=85100914624&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:85100914624

SN - 978-1-7281-7040-4

SP - 289

EP - 291

BT - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 15th European Microwave Integrated Circuits Conference, EuMIC 2020

Y2 - 11 January 2021 through 12 January 2021

ER -

250 GHz SiGe SPDT Resonator Switch

Abstract

Conference

Keywords

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