28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

Heorhii Bohuslavskyi, S. Barraud, M. Casse, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. De Franceschi, M. Vinet

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

43 Citations (Scopus)

Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages143-144
ISBN (Electronic)978-4-8634-8647-8
DOIs
Publication statusPublished - Jun 2017
MoE publication typeA4 Article in a conference publication

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