28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

Heorhii Bohuslavskyi; S. Barraud; M. Casse; V. Barrai; B. Bertrand; L. Hutin; F. Arnaud; P. Galy; M. Sanquer; S. De Franceschi; M. Vinet

doi:10.23919/snw.2017.8242338

28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

Heorhii Bohuslavskyi
, S. Barraud
, M. Casse
, V. Barrai
, B. Bertrand
, L. Hutin
, F. Arnaud
, P. Galy
, M. Sanquer
, S. De Franceschi
, M. Vinet

Not published at VTT

Laboratoire d'électronique des technologies de l'information (LETI)
Institute for Nanoscience and Cryogenics (INAC)
STMicroelectronics SA

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

49 Citations (Scopus)

Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	143-144
ISBN (Electronic)	978-4-8634-8647-8
DOIs	https://doi.org/10.23919/snw.2017.8242338
Publication status	Published - Jun 2017
MoE publication type	A4 Article in a conference publication

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10.23919/snw.2017.8242338

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Bohuslavskyi, H., Barraud, S., Casse, M., Barrai, V., Bertrand, B., Hutin, L., Arnaud, F., Galy, P., Sanquer, M., Franceschi, S. D., & Vinet, M. (2017). 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 143-144). Article 8242338 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.23919/snw.2017.8242338

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title = "28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing",

abstract = "This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.",

author = "Heorhii Bohuslavskyi and S. Barraud and M. Casse and V. Barrai and B. Bertrand and L. Hutin and F. Arnaud and P. Galy and M. Sanquer and Franceschi, \{S. De\} and M. Vinet",

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year = "2017",

month = jun,

doi = "10.23919/snw.2017.8242338",

language = "English",

pages = "143--144",

booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

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Bohuslavskyi, H, Barraud, S, Casse, M, Barrai, V, Bertrand, B, Hutin, L, Arnaud, F, Galy, P, Sanquer, M, Franceschi, SD & Vinet, M 2017, 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242338, IEEE Institute of Electrical and Electronic Engineers, pp. 143-144. https://doi.org/10.23919/snw.2017.8242338

28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing. / Bohuslavskyi, Heorhii; Barraud, S.; Casse, M. et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. IEEE Institute of Electrical and Electronic Engineers, 2017. p. 143-144 8242338.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

AU - Bohuslavskyi, Heorhii

AU - Barraud, S.

AU - Casse, M.

AU - Barrai, V.

AU - Bertrand, B.

AU - Hutin, L.

AU - Arnaud, F.

AU - Galy, P.

AU - Sanquer, M.

AU - Franceschi, S. De

AU - Vinet, M.

PY - 2017/6

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N2 - This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

AB - This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

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DO - 10.23919/snw.2017.8242338

M3 - Conference article in proceedings

SP - 143

EP - 144

BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

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