3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli (Corresponding Author), K. Helle, H. Sandaker, B. Stugu, M. Barbero, F. Hügging, M. Karagounis, V. Kostyukhin, H. Krüger, J. W. Tsung, N. Wermes, M. Capua, S. Fazio, A. Mastroberardino, G. Susinno, C. Gallrapp, B. Di Girolamo, D. Dobos, A. La Rosa, H. PerneggerS. Roe, T. Slavicek, S. Pospisil, K. Jakobs, M. Köhler, U. Parzefall, G. Darbo, G. Gariano, C. Gemme, A. Rovani, E. Ruscino, C. Butter, R. Bates, V. Oshea, S. Parker, M. Cavalli-Sforza, S. Grinstein, I. Korokolov, C. Pradilla, K. Einsweiler, M. Garcia-Sciveres, M. Borri, C. Da Vià, J. Freestone, S. Kolya, C. H. Lai, C. Nellist, J. Pater, R. Thompson, S. J. Watts, M. Hoeferkamp, Saskia Seidel, E. Bolle, H. Gjersdal, K. N. Sjoebaek, S. Stapnes, O. Rohne, D. Su, C. Young, P. Hansson, P Grenier, J. Hasi, C. Kenney, M. Kocian, P. Jackson, D. Silverstein, H. Davetak, B. Dewilde, D. Tsybychev, G. F. Dalla Betta, P. Gabos, M. Povoli, M. Cobal, M. P. Giordani, L. Selmi, A. Cristofoli, D. Esseni, P. Palestri, C. Fleta, M. Lozano, G. Pellegrini, M. Boscardin, A. Bagolini, C. Piemonte, S. Ronchin, N. Zorzi, T. E. Hansen, Teis Hansen, A. Kok, N. Lietaer, Juha Kalliopuska, Aarne Oja

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)


The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Original languageEnglish
Pages (from-to)150-157
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
Publication statusPublished - 11 Sept 2011
MoE publication typeNot Eligible
Event5th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PIXEL 2010 - Grindelwald, Switzerland
Duration: 6 Sept 201010 Sept 2010


  • 3D sensors
  • ATLAS upgrade
  • HL-LHC
  • Radiation detectors
  • Silicon sensors


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