3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli (Corresponding Author), K. Helle, H. Sandaker, B. Stugu, M. Barbero, F. Hügging, M. Karagounis, V. Kostyukhin, H. Krüger, J. W. Tsung, N. Wermes, M. Capua, S. Fazio, A. Mastroberardino, G. Susinno, C. Gallrapp, B. Di Girolamo, D. Dobos, A. La Rosa, H. PerneggerS. Roe, T. Slavicek, S. Pospisil, K. Jakobs, M. Köhler, U. Parzefall, G. Darbo, G. Gariano, C. Gemme, A. Rovani, E. Ruscino, C. Butter, R. Bates, V. Oshea, S. Parker, M. Cavalli-Sforza, S. Grinstein, I. Korokolov, C. Pradilla, K. Einsweiler, M. Garcia-Sciveres, M. Borri, C. Da Vià, J. Freestone, S. Kolya, C. H. Lai, C. Nellist, J. Pater, R. Thompson, S. J. Watts, M. Hoeferkamp, Saskia Seidel, E. Bolle, H. Gjersdal, K. N. Sjoebaek, S. Stapnes, O. Rohne, D. Su, C. Young, P. Hansson, P Grenier, J. Hasi, C. Kenney, M. Kocian, P. Jackson, D. Silverstein, H. Davetak, B. Dewilde, D. Tsybychev, G. F. Dalla Betta, P. Gabos, M. Povoli, M. Cobal, M. P. Giordani, L. Selmi, A. Cristofoli, D. Esseni, P. Palestri, C. Fleta, M. Lozano, G. Pellegrini, M. Boscardin, A. Bagolini, C. Piemonte, S. Ronchin, N. Zorzi, T. E. Hansen, Teis Hansen, A. Kok, N. Lietaer, Juha Kalliopuska, Aarne Oja

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Original languageEnglish
Pages (from-to)150-157
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume650
Issue number1
DOIs
Publication statusPublished - 11 Sep 2011
MoE publication typeNot Eligible
Event5th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PIXEL 2010 - Grindelwald, Switzerland
Duration: 6 Sep 201010 Sep 2010

Fingerprint

Pixels
pixels
Silicon
sensors
Colliding beam accelerators
Sensors
silicon
Detectors
Silicon sensors
apexes
Electrodes
VLSI circuits
electrodes
detectors
very large scale integration
Italy
Irradiation
Radiation
chips
wafers

Keywords

  • 3D sensors
  • ATLAS upgrade
  • HL-LHC
  • Radiation detectors
  • Silicon sensors

Cite this

Micelli, A. ; Helle, K. ; Sandaker, H. ; Stugu, B. ; Barbero, M. ; Hügging, F. ; Karagounis, M. ; Kostyukhin, V. ; Krüger, H. ; Tsung, J. W. ; Wermes, N. ; Capua, M. ; Fazio, S. ; Mastroberardino, A. ; Susinno, G. ; Gallrapp, C. ; Di Girolamo, B. ; Dobos, D. ; La Rosa, A. ; Pernegger, H. ; Roe, S. ; Slavicek, T. ; Pospisil, S. ; Jakobs, K. ; Köhler, M. ; Parzefall, U. ; Darbo, G. ; Gariano, G. ; Gemme, C. ; Rovani, A. ; Ruscino, E. ; Butter, C. ; Bates, R. ; Oshea, V. ; Parker, S. ; Cavalli-Sforza, M. ; Grinstein, S. ; Korokolov, I. ; Pradilla, C. ; Einsweiler, K. ; Garcia-Sciveres, M. ; Borri, M. ; Da Vià, C. ; Freestone, J. ; Kolya, S. ; Lai, C. H. ; Nellist, C. ; Pater, J. ; Thompson, R. ; Watts, S. J. ; Hoeferkamp, M. ; Seidel, Saskia ; Bolle, E. ; Gjersdal, H. ; Sjoebaek, K. N. ; Stapnes, S. ; Rohne, O. ; Su, D. ; Young, C. ; Hansson, P. ; Grenier, P ; Hasi, J. ; Kenney, C. ; Kocian, M. ; Jackson, P. ; Silverstein, D. ; Davetak, H. ; Dewilde, B. ; Tsybychev, D. ; Dalla Betta, G. F. ; Gabos, P. ; Povoli, M. ; Cobal, M. ; Giordani, M. P. ; Selmi, L. ; Cristofoli, A. ; Esseni, D. ; Palestri, P. ; Fleta, C. ; Lozano, M. ; Pellegrini, G. ; Boscardin, M. ; Bagolini, A. ; Piemonte, C. ; Ronchin, S. ; Zorzi, N. ; Hansen, T. E. ; Hansen, Teis ; Kok, A. ; Lietaer, N. ; Kalliopuska, Juha ; Oja, Aarne. / 3D-FBK pixel sensors : Recent beam tests results with irradiated devices. In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2011 ; Vol. 650, No. 1. pp. 150-157.
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abstract = "The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.",
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Micelli, A, Helle, K, Sandaker, H, Stugu, B, Barbero, M, Hügging, F, Karagounis, M, Kostyukhin, V, Krüger, H, Tsung, JW, Wermes, N, Capua, M, Fazio, S, Mastroberardino, A, Susinno, G, Gallrapp, C, Di Girolamo, B, Dobos, D, La Rosa, A, Pernegger, H, Roe, S, Slavicek, T, Pospisil, S, Jakobs, K, Köhler, M, Parzefall, U, Darbo, G, Gariano, G, Gemme, C, Rovani, A, Ruscino, E, Butter, C, Bates, R, Oshea, V, Parker, S, Cavalli-Sforza, M, Grinstein, S, Korokolov, I, Pradilla, C, Einsweiler, K, Garcia-Sciveres, M, Borri, M, Da Vià, C, Freestone, J, Kolya, S, Lai, CH, Nellist, C, Pater, J, Thompson, R, Watts, SJ, Hoeferkamp, M, Seidel, S, Bolle, E, Gjersdal, H, Sjoebaek, KN, Stapnes, S, Rohne, O, Su, D, Young, C, Hansson, P, Grenier, P, Hasi, J, Kenney, C, Kocian, M, Jackson, P, Silverstein, D, Davetak, H, Dewilde, B, Tsybychev, D, Dalla Betta, GF, Gabos, P, Povoli, M, Cobal, M, Giordani, MP, Selmi, L, Cristofoli, A, Esseni, D, Palestri, P, Fleta, C, Lozano, M, Pellegrini, G, Boscardin, M, Bagolini, A, Piemonte, C, Ronchin, S, Zorzi, N, Hansen, TE, Hansen, T, Kok, A, Lietaer, N, Kalliopuska, J & Oja, A 2011, '3D-FBK pixel sensors: Recent beam tests results with irradiated devices', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 650, no. 1, pp. 150-157. https://doi.org/10.1016/j.nima.2010.12.209

3D-FBK pixel sensors : Recent beam tests results with irradiated devices. / Micelli, A. (Corresponding Author); Helle, K.; Sandaker, H.; Stugu, B.; Barbero, M.; Hügging, F.; Karagounis, M.; Kostyukhin, V.; Krüger, H.; Tsung, J. W.; Wermes, N.; Capua, M.; Fazio, S.; Mastroberardino, A.; Susinno, G.; Gallrapp, C.; Di Girolamo, B.; Dobos, D.; La Rosa, A.; Pernegger, H.; Roe, S.; Slavicek, T.; Pospisil, S.; Jakobs, K.; Köhler, M.; Parzefall, U.; Darbo, G.; Gariano, G.; Gemme, C.; Rovani, A.; Ruscino, E.; Butter, C.; Bates, R.; Oshea, V.; Parker, S.; Cavalli-Sforza, M.; Grinstein, S.; Korokolov, I.; Pradilla, C.; Einsweiler, K.; Garcia-Sciveres, M.; Borri, M.; Da Vià, C.; Freestone, J.; Kolya, S.; Lai, C. H.; Nellist, C.; Pater, J.; Thompson, R.; Watts, S. J.; Hoeferkamp, M.; Seidel, Saskia; Bolle, E.; Gjersdal, H.; Sjoebaek, K. N.; Stapnes, S.; Rohne, O.; Su, D.; Young, C.; Hansson, P.; Grenier, P; Hasi, J.; Kenney, C.; Kocian, M.; Jackson, P.; Silverstein, D.; Davetak, H.; Dewilde, B.; Tsybychev, D.; Dalla Betta, G. F.; Gabos, P.; Povoli, M.; Cobal, M.; Giordani, M. P.; Selmi, L.; Cristofoli, A.; Esseni, D.; Palestri, P.; Fleta, C.; Lozano, M.; Pellegrini, G.; Boscardin, M.; Bagolini, A.; Piemonte, C.; Ronchin, S.; Zorzi, N.; Hansen, T. E.; Hansen, Teis; Kok, A.; Lietaer, N.; Kalliopuska, Juha; Oja, Aarne.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 650, No. 1, 11.09.2011, p. 150-157.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - 3D-FBK pixel sensors

T2 - Recent beam tests results with irradiated devices

AU - Micelli, A.

AU - Helle, K.

AU - Sandaker, H.

AU - Stugu, B.

AU - Barbero, M.

AU - Hügging, F.

AU - Karagounis, M.

AU - Kostyukhin, V.

AU - Krüger, H.

AU - Tsung, J. W.

AU - Wermes, N.

AU - Capua, M.

AU - Fazio, S.

AU - Mastroberardino, A.

AU - Susinno, G.

AU - Gallrapp, C.

AU - Di Girolamo, B.

AU - Dobos, D.

AU - La Rosa, A.

AU - Pernegger, H.

AU - Roe, S.

AU - Slavicek, T.

AU - Pospisil, S.

AU - Jakobs, K.

AU - Köhler, M.

AU - Parzefall, U.

AU - Darbo, G.

AU - Gariano, G.

AU - Gemme, C.

AU - Rovani, A.

AU - Ruscino, E.

AU - Butter, C.

AU - Bates, R.

AU - Oshea, V.

AU - Parker, S.

AU - Cavalli-Sforza, M.

AU - Grinstein, S.

AU - Korokolov, I.

AU - Pradilla, C.

AU - Einsweiler, K.

AU - Garcia-Sciveres, M.

AU - Borri, M.

AU - Da Vià, C.

AU - Freestone, J.

AU - Kolya, S.

AU - Lai, C. H.

AU - Nellist, C.

AU - Pater, J.

AU - Thompson, R.

AU - Watts, S. J.

AU - Hoeferkamp, M.

AU - Seidel, Saskia

AU - Bolle, E.

AU - Gjersdal, H.

AU - Sjoebaek, K. N.

AU - Stapnes, S.

AU - Rohne, O.

AU - Su, D.

AU - Young, C.

AU - Hansson, P.

AU - Grenier, P

AU - Hasi, J.

AU - Kenney, C.

AU - Kocian, M.

AU - Jackson, P.

AU - Silverstein, D.

AU - Davetak, H.

AU - Dewilde, B.

AU - Tsybychev, D.

AU - Dalla Betta, G. F.

AU - Gabos, P.

AU - Povoli, M.

AU - Cobal, M.

AU - Giordani, M. P.

AU - Selmi, L.

AU - Cristofoli, A.

AU - Esseni, D.

AU - Palestri, P.

AU - Fleta, C.

AU - Lozano, M.

AU - Pellegrini, G.

AU - Boscardin, M.

AU - Bagolini, A.

AU - Piemonte, C.

AU - Ronchin, S.

AU - Zorzi, N.

AU - Hansen, T. E.

AU - Hansen, Teis

AU - Kok, A.

AU - Lietaer, N.

AU - Kalliopuska, Juha

AU - Oja, Aarne

PY - 2011/9/11

Y1 - 2011/9/11

N2 - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

AB - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

KW - 3D sensors

KW - ATLAS upgrade

KW - HL-LHC

KW - Radiation detectors

KW - Silicon sensors

U2 - 10.1016/j.nima.2010.12.209

DO - 10.1016/j.nima.2010.12.209

M3 - Article

AN - SCOPUS:80052262862

VL - 650

SP - 150

EP - 157

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1

ER -