3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli; K. Helle; H. Sandaker; B. Stugu; M. Barbero; F. Hügging; M. Karagounis; V. Kostyukhin; H. Krüger; J. W. Tsung; N. Wermes; M. Capua; S. Fazio; A. Mastroberardino; G. Susinno; C. Gallrapp; B. Di Girolamo; D. Dobos; A. La Rosa; H. Pernegger; S. Roe; T. Slavicek; S. Pospisil; K. Jakobs; M. Köhler; U. Parzefall; G. Darbo; G. Gariano; C. Gemme; A. Rovani; E. Ruscino; C. Butter; R. Bates; V. Oshea; S. Parker; M. Cavalli-Sforza; S. Grinstein; I. Korokolov; C. Pradilla; K. Einsweiler; M. Garcia-Sciveres; M. Borri; C. Da Vià; J. Freestone; S. Kolya; C. H. Lai; C. Nellist; J. Pater; R. Thompson; S. J. Watts; M. Hoeferkamp; Saskia Seidel; E. Bolle; H. Gjersdal; K. N. Sjoebaek; S. Stapnes; O. Rohne; D. Su; C. Young; P. Hansson; P Grenier; J. Hasi; C. Kenney; M. Kocian; P. Jackson; D. Silverstein; H. Davetak; B. Dewilde; D. Tsybychev; G. F. Dalla Betta; P. Gabos; M. Povoli; M. Cobal; M. P. Giordani; L. Selmi; A. Cristofoli; D. Esseni; P. Palestri; C. Fleta; M. Lozano; G. Pellegrini; M. Boscardin; A. Bagolini; C. Piemonte; S. Ronchin; N. Zorzi; T. E. Hansen; Teis Hansen; A. Kok; N. Lietaer; Juha Kalliopuska; Aarne Oja

doi:10.1016/j.nima.2010.12.209

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli^*
, K. Helle
, H. Sandaker
, B. Stugu
, M. Barbero
, F. Hügging
, M. Karagounis
, V. Kostyukhin
, H. Krüger
, J. W. Tsung
, N. Wermes
, M. Capua
, S. Fazio
, A. Mastroberardino
, G. Susinno
, C. Gallrapp
, B. Di Girolamo
, D. Dobos
, A. La Rosa
, H. Pernegger

S. Roe, T. Slavicek, S. Pospisil, K. Jakobs, M. Köhler, U. Parzefall, G. Darbo, G. Gariano, C. Gemme, A. Rovani, E. Ruscino, C. Butter, R. Bates, V. Oshea, S. Parker, M. Cavalli-Sforza, S. Grinstein, I. Korokolov, C. Pradilla, K. Einsweiler, M. Garcia-Sciveres, M. Borri, C. Da Vià, J. Freestone, S. Kolya, C. H. Lai, C. Nellist, J. Pater, R. Thompson, S. J. Watts, M. Hoeferkamp, Saskia Seidel, E. Bolle, H. Gjersdal, K. N. Sjoebaek, S. Stapnes, O. Rohne, D. Su, C. Young, P. Hansson, P Grenier, J. Hasi, C. Kenney, M. Kocian, P. Jackson, D. Silverstein, H. Davetak, B. Dewilde, D. Tsybychev, G. F. Dalla Betta, P. Gabos, M. Povoli, M. Cobal, M. P. Giordani, L. Selmi, A. Cristofoli, D. Esseni, P. Palestri, C. Fleta, M. Lozano, G. Pellegrini, M. Boscardin, A. Bagolini, C. Piemonte, S. Ronchin, N. Zorzi, T. E. Hansen, Teis Hansen, A. Kok, N. Lietaer, Juha Kalliopuska, Aarne Oja

^*Corresponding author for this work

VTT Technical Research Centre of Finland

University of Udine
Istituto Nazionale di Fisica Nucleare (INFN)
University of Bergen
University of Bonn
University of Calabria
European Organization for Nuclear Research (CERN)
Czech Technical University (CTU)
University of Freiburg
University of Genoa (UniGe)
University of Glasgow
University of Hawaii at Hilo
Institute for High Energy Physics (IFAE)
Lawrence Berkeley National Laboratory (LBNL)
University of Manchester
University of New Mexico
University of Oslo
Fermi National Accelerator Laboratory
Stony Brook University (SUNY)
University of Trento (UNITN)
Spanish National Research Council (CSIC)
Bruno Kessler Foundation (FBK)
SINTEF AS
VTT (former employee or external)

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Original language	English
Pages (from-to)	150-157
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	650
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2010.12.209
Publication status	Published - 11 Sept 2011
MoE publication type	Not Eligible
Event	5th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PIXEL 2010 - Grindelwald, Switzerland Duration: 6 Sept 2010 → 10 Sept 2010

Keywords

3D sensors
ATLAS upgrade
HL-LHC
Radiation detectors
Silicon sensors

Access to Document

10.1016/j.nima.2010.12.209

Cite this

Micelli, A., Helle, K., Sandaker, H., Stugu, B., Barbero, M., Hügging, F., Karagounis, M., Kostyukhin, V., Krüger, H., Tsung, J. W., Wermes, N., Capua, M., Fazio, S., Mastroberardino, A., Susinno, G., Gallrapp, C., Di Girolamo, B., Dobos, D., La Rosa, A., ... Oja, A. (2011). 3D-FBK pixel sensors: Recent beam tests results with irradiated devices. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 650(1), 150-157. https://doi.org/10.1016/j.nima.2010.12.209

@article{6a898f0bf8134670b2d094bf37e2d3f2,

title = "3D-FBK pixel sensors: Recent beam tests results with irradiated devices",

abstract = "The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.",

keywords = "3D sensors, ATLAS upgrade, HL-LHC, Radiation detectors, Silicon sensors",

author = "A. Micelli and K. Helle and H. Sandaker and B. Stugu and M. Barbero and F. H{\"u}gging and M. Karagounis and V. Kostyukhin and H. Kr{\"u}ger and Tsung, \{J. W.\} and N. Wermes and M. Capua and S. Fazio and A. Mastroberardino and G. Susinno and C. Gallrapp and \{Di Girolamo\}, B. and D. Dobos and \{La Rosa\}, A. and H. Pernegger and S. Roe and T. Slavicek and S. Pospisil and K. Jakobs and M. K{\"o}hler and U. Parzefall and G. Darbo and G. Gariano and C. Gemme and A. Rovani and E. Ruscino and C. Butter and R. Bates and V. Oshea and S. Parker and M. Cavalli-Sforza and S. Grinstein and I. Korokolov and C. Pradilla and K. Einsweiler and M. Garcia-Sciveres and M. Borri and \{Da Vi{\`a}\}, C. and J. Freestone and S. Kolya and Lai, \{C. H.\} and C. Nellist and J. Pater and R. Thompson and Watts, \{S. J.\} and M. Hoeferkamp and Saskia Seidel and E. Bolle and H. Gjersdal and Sjoebaek, \{K. N.\} and S. Stapnes and O. Rohne and D. Su and C. Young and P. Hansson and P Grenier and J. Hasi and C. Kenney and M. Kocian and P. Jackson and D. Silverstein and H. Davetak and B. Dewilde and D. Tsybychev and \{Dalla Betta\}, \{G. F.\} and P. Gabos and M. Povoli and M. Cobal and Giordani, \{M. P.\} and L. Selmi and A. Cristofoli and D. Esseni and P. Palestri and C. Fleta and M. Lozano and G. Pellegrini and M. Boscardin and A. Bagolini and C. Piemonte and S. Ronchin and N. Zorzi and Hansen, \{T. E.\} and Teis Hansen and A. Kok and N. Lietaer and Juha Kalliopuska and Aarne Oja",

year = "2011",

month = sep,

day = "11",

doi = "10.1016/j.nima.2010.12.209",

language = "English",

volume = "650",

pages = "150--157",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "1",

note = "5th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PIXEL 2010 ; Conference date: 06-09-2010 Through 10-09-2010",

}

Micelli, A, Helle, K, Sandaker, H, Stugu, B, Barbero, M, Hügging, F, Karagounis, M, Kostyukhin, V, Krüger, H, Tsung, JW, Wermes, N, Capua, M, Fazio, S, Mastroberardino, A, Susinno, G, Gallrapp, C, Di Girolamo, B, Dobos, D, La Rosa, A, Pernegger, H, Roe, S, Slavicek, T, Pospisil, S, Jakobs, K, Köhler, M, Parzefall, U, Darbo, G, Gariano, G, Gemme, C, Rovani, A, Ruscino, E, Butter, C, Bates, R, Oshea, V, Parker, S, Cavalli-Sforza, M, Grinstein, S, Korokolov, I, Pradilla, C, Einsweiler, K, Garcia-Sciveres, M, Borri, M, Da Vià, C, Freestone, J, Kolya, S, Lai, CH, Nellist, C, Pater, J, Thompson, R, Watts, SJ, Hoeferkamp, M, Seidel, S, Bolle, E, Gjersdal, H, Sjoebaek, KN, Stapnes, S, Rohne, O, Su, D, Young, C, Hansson, P, Grenier, P, Hasi, J, Kenney, C, Kocian, M, Jackson, P, Silverstein, D, Davetak, H, Dewilde, B, Tsybychev, D, Dalla Betta, GF, Gabos, P, Povoli, M, Cobal, M, Giordani, MP, Selmi, L, Cristofoli, A, Esseni, D, Palestri, P, Fleta, C, Lozano, M, Pellegrini, G, Boscardin, M, Bagolini, A, Piemonte, C, Ronchin, S, Zorzi, N, Hansen, TE, Hansen, T, Kok, A, Lietaer, N, Kalliopuska, J & Oja, A 2011, '3D-FBK pixel sensors: Recent beam tests results with irradiated devices', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 650, no. 1, pp. 150-157. https://doi.org/10.1016/j.nima.2010.12.209

3D-FBK pixel sensors: Recent beam tests results with irradiated devices. / Micelli, A.; Helle, K.; Sandaker, H. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 650, No. 1, 11.09.2011, p. 150-157.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - 3D-FBK pixel sensors

T2 - 5th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PIXEL 2010

AU - Micelli, A.

AU - Helle, K.

AU - Sandaker, H.

AU - Stugu, B.

AU - Barbero, M.

AU - Hügging, F.

AU - Karagounis, M.

AU - Kostyukhin, V.

AU - Krüger, H.

AU - Tsung, J. W.

AU - Wermes, N.

AU - Capua, M.

AU - Fazio, S.

AU - Mastroberardino, A.

AU - Susinno, G.

AU - Gallrapp, C.

AU - Di Girolamo, B.

AU - Dobos, D.

AU - La Rosa, A.

AU - Pernegger, H.

AU - Roe, S.

AU - Slavicek, T.

AU - Pospisil, S.

AU - Jakobs, K.

AU - Köhler, M.

AU - Parzefall, U.

AU - Darbo, G.

AU - Gariano, G.

AU - Gemme, C.

AU - Rovani, A.

AU - Ruscino, E.

AU - Butter, C.

AU - Bates, R.

AU - Oshea, V.

AU - Parker, S.

AU - Cavalli-Sforza, M.

AU - Grinstein, S.

AU - Korokolov, I.

AU - Pradilla, C.

AU - Einsweiler, K.

AU - Garcia-Sciveres, M.

AU - Borri, M.

AU - Da Vià, C.

AU - Freestone, J.

AU - Kolya, S.

AU - Lai, C. H.

AU - Nellist, C.

AU - Pater, J.

AU - Thompson, R.

AU - Watts, S. J.

AU - Hoeferkamp, M.

AU - Seidel, Saskia

AU - Bolle, E.

AU - Gjersdal, H.

AU - Sjoebaek, K. N.

AU - Stapnes, S.

AU - Rohne, O.

AU - Su, D.

AU - Young, C.

AU - Hansson, P.

AU - Grenier, P

AU - Hasi, J.

AU - Kenney, C.

AU - Kocian, M.

AU - Jackson, P.

AU - Silverstein, D.

AU - Davetak, H.

AU - Dewilde, B.

AU - Tsybychev, D.

AU - Dalla Betta, G. F.

AU - Gabos, P.

AU - Povoli, M.

AU - Cobal, M.

AU - Giordani, M. P.

AU - Selmi, L.

AU - Cristofoli, A.

AU - Esseni, D.

AU - Palestri, P.

AU - Fleta, C.

AU - Lozano, M.

AU - Pellegrini, G.

AU - Boscardin, M.

AU - Bagolini, A.

AU - Piemonte, C.

AU - Ronchin, S.

AU - Zorzi, N.

AU - Hansen, T. E.

AU - Hansen, Teis

AU - Kok, A.

AU - Lietaer, N.

AU - Kalliopuska, Juha

AU - Oja, Aarne

PY - 2011/9/11

Y1 - 2011/9/11

N2 - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

AB - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

KW - 3D sensors

KW - ATLAS upgrade

KW - HL-LHC

KW - Radiation detectors

KW - Silicon sensors

U2 - 10.1016/j.nima.2010.12.209

DO - 10.1016/j.nima.2010.12.209

M3 - Article

AN - SCOPUS:80052262862

SN - 0168-9002

VL - 650

SP - 150

EP - 157

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

Y2 - 6 September 2010 through 10 September 2010

ER -

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

Abstract

Keywords

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