3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala, Sergey Gorelick, Vitaliy A. Guzenko, Christian David

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.
Original languageEnglish
Article number06F301
Number of pages5
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume29
Issue number6
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed
Event55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Las Vegas, United States
Duration: 31 May 20113 Jun 2011

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Electron beam lithography
Hydrogen
NEMS
Photonic crystals
Aspect ratio
Lenses
Carbon dioxide
Fabrication
X rays

Cite this

Vila-Comamala, Joan ; Gorelick, Sergey ; Guzenko, Vitaliy A. ; David, Christian. / 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2011 ; Vol. 29, No. 6.
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abstract = "The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.",
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3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography. / Vila-Comamala, Joan; Gorelick, Sergey; Guzenko, Vitaliy A.; David, Christian.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 29, No. 6, 06F301, 2011.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

AU - Vila-Comamala, Joan

AU - Gorelick, Sergey

AU - Guzenko, Vitaliy A.

AU - David, Christian

PY - 2011

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N2 - The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

AB - The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

U2 - 10.1116/1.3629811

DO - 10.1116/1.3629811

M3 - Article

VL - 29

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

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