3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala, Sergey Gorelick, Vitaliy A. Guzenko, Christian David

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Abstract

The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.
Original languageEnglish
Article number06F301
Number of pages5
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume29
Issue number6
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed
Event55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Las Vegas, United States
Duration: 31 May 20113 Jun 2011

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