3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala; Sergey Gorelick; Vitaliy A. Guzenko; Christian David

doi:10.1116/1.3629811

3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Joan Vila-Comamala, Sergey Gorelick, Vitaliy A. Guzenko, Christian David

VTT Technical Research Centre of Finland

Paul Scherrer Institute (PSI)

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

Original language	English
Article number	06F301
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3629811
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed
Event	55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Las Vegas, United States Duration: 31 May 2011 → 3 Jun 2011

Access to Document

10.1116/1.3629811

Cite this

@article{2b1e552d180c4ad8950ae7eb912f8708,

title = "3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography",

abstract = "The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.",

author = "Joan Vila-Comamala and Sergey Gorelick and Guzenko, {Vitaliy A.} and Christian David",

year = "2011",

doi = "10.1116/1.3629811",

language = "English",

volume = "29",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "6",

note = "55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN ; Conference date: 31-05-2011 Through 03-06-2011",

}

TY - JOUR

T1 - 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

AU - Vila-Comamala, Joan

AU - Gorelick, Sergey

AU - Guzenko, Vitaliy A.

AU - David, Christian

PY - 2011

Y1 - 2011

N2 - The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

AB - The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.

U2 - 10.1116/1.3629811

DO - 10.1116/1.3629811

M3 - Article

SN - 2166-2746

VL - 29

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 6

M1 - 06F301

T2 - 55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Y2 - 31 May 2011 through 3 June 2011

ER -

3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

Abstract

Access to Document

Fingerprint

Cite this