The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 μm. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics|
|Publication status||Published - 2011|
|MoE publication type||A1 Journal article-refereed|
|Event||55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Las Vegas, United States|
Duration: 31 May 2011 → 3 Jun 2011
Vila-Comamala, J., Gorelick, S., Guzenko, V. A., & David, C. (2011). 3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 29(6), [06F301]. https://doi.org/10.1116/1.3629811