3D simulations of 3D silicon radiation detector structures

Juha Kalliopuska; Simo Eränen; Risto Orava

doi:10.1016/j.nima.2006.07.015

3D simulations of 3D silicon radiation detector structures

Juha Kalliopuska (Corresponding Author), Simo Eränen, Risto Orava

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.

Original language	English
Pages (from-to)	27-33
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	568
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2006.07.015
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed
Event	10th European Symposium on Semiconductor Detectors - Bavaria, Germany Duration: 12 Jun 2005 → 16 Jun 2005

Keywords

3D silicon detectors
3D simulation
Surface effects
Current–voltage characteristics
Capacitance–voltage characteristics

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title = "3D simulations of 3D silicon radiation detector structures",

abstract = "The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.",

keywords = "3D silicon detectors, 3D simulation, Surface effects, Current–voltage characteristics, Capacitance–voltage characteristics",

author = "Juha Kalliopuska and Simo Er{\"a}nen and Risto Orava",

note = "Project code: 1330; 10th European Symposium on Semiconductor Detectors, ESSD 2005 ; Conference date: 12-06-2005 Through 16-06-2005",

year = "2006",

doi = "10.1016/j.nima.2006.07.015",

language = "English",

volume = "568",

pages = "27--33",

journal = "Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "1",

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3D simulations of 3D silicon radiation detector structures. / Kalliopuska, Juha (Corresponding Author); Eränen, Simo; Orava, Risto.

In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 568, No. 1, 2006, p. 27-33.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - 3D simulations of 3D silicon radiation detector structures

AU - Kalliopuska, Juha

AU - Eränen, Simo

AU - Orava, Risto

N1 - Project code: 1330

PY - 2006

Y1 - 2006

N2 - The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.

AB - The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.

KW - 3D silicon detectors

KW - 3D simulation

KW - Surface effects

KW - Current–voltage characteristics

KW - Capacitance–voltage characteristics

U2 - 10.1016/j.nima.2006.07.015

DO - 10.1016/j.nima.2006.07.015

M3 - Article

VL - 568

SP - 27

EP - 33

JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1

T2 - 10th European Symposium on Semiconductor Detectors

Y2 - 12 June 2005 through 16 June 2005

ER -