Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 27-33 |
| Journal | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 568 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 |
| MoE publication type | A1 Journal article-refereed |
| Event | 10th European Symposium on Semiconductor Detectors - Bavaria, Germany Duration: 12 Jun 2005 → 16 Jun 2005 |
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Keywords
- 3D silicon detectors
- 3D simulation
- Surface effects
- Current–voltage characteristics
- Capacitance–voltage characteristics
Cite this
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3D simulations of 3D silicon radiation detector structures. / Kalliopuska, Juha (Corresponding Author); Eränen, Simo; Orava, Risto.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 568, No. 1, 2006, p. 27-33.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - 3D simulations of 3D silicon radiation detector structures
AU - Kalliopuska, Juha
AU - Eränen, Simo
AU - Orava, Risto
N1 - Project code: 1330
PY - 2006
Y1 - 2006
N2 - The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.
AB - The simulations carried out in three dimensions (3D) are becoming important as more and more detector structures are fabricated beyond the traditional planar ones. A rectangular 3D detector structure is simulated using a finite-element (FE) simulation software ISE-TCAD. The basic characteristics of the detector structure simulated in two dimensions (2D) and 3D are compared in order to determine whether there are differences between the two approaches. Effects of the surface charge and surface recombination to the electrostatic potential, electric field, leakage current and capacitance are studied in detail. The 2D and 3D simulations give similar results on IV and CV characteristics when the surface effects are not included in the simulations. The presence of the surface charge at the silicon–oxide interface increases the leakage current while protecting the detector from the surface currents. It is shown that the vertical spacing of the grid below the surface is playing a critical role in the current results.
KW - 3D silicon detectors
KW - 3D simulation
KW - Surface effects
KW - Current–voltage characteristics
KW - Capacitance–voltage characteristics
U2 - 10.1016/j.nima.2006.07.015
DO - 10.1016/j.nima.2006.07.015
M3 - Article
VL - 568
SP - 27
EP - 33
JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
IS - 1
ER -