A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, N. Rolland, B. Grandchamp, Tauno Vähä-Heikkilä, R. Baggen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3=24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz)
Original languageEnglish
Title of host publicationProceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013
Pages432-435
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
Event8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013 - Nuremberg, Germany
Duration: 1 Jan 2013 → …

Conference

Conference8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013
CountryGermany
CityNuremberg
Period1/01/13 → …

Fingerprint

Monolithic microwave integrated circuits
MEMS
Noise figure
Networks (circuits)

Keywords

  • 0-level package
  • low noise amplifiers
  • MMIC
  • packaging
  • radio frequency micro-electromechanical systems
  • switches

Cite this

Gustafsson, A., Samuelsson, C., Malmqvist, R., Seok, S., Fryziel, M., Rolland, N., ... Baggen, R. (2013). A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. In Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013 (pp. 432-435)
Gustafsson, A. ; Samuelsson, C. ; Malmqvist, R. ; Seok, S. ; Fryziel, M. ; Rolland, N. ; Grandchamp, B. ; Vähä-Heikkilä, Tauno ; Baggen, R. / A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013. 2013. pp. 432-435
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abstract = "This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3=24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz)",
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author = "A. Gustafsson and C. Samuelsson and R. Malmqvist and S. Seok and M. Fryziel and N. Rolland and B. Grandchamp and Tauno V{\"a}h{\"a}-Heikkil{\"a} and R. Baggen",
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Gustafsson, A, Samuelsson, C, Malmqvist, R, Seok, S, Fryziel, M, Rolland, N, Grandchamp, B, Vähä-Heikkilä, T & Baggen, R 2013, A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. in Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013. pp. 432-435, 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013, Nuremberg, Germany, 1/01/13.

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. / Gustafsson, A.; Samuelsson, C.; Malmqvist, R.; Seok, S.; Fryziel, M.; Rolland, N.; Grandchamp, B.; Vähä-Heikkilä, Tauno; Baggen, R.

Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013. 2013. p. 432-435.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

AU - Gustafsson, A.

AU - Samuelsson, C.

AU - Malmqvist, R.

AU - Seok, S.

AU - Fryziel, M.

AU - Rolland, N.

AU - Grandchamp, B.

AU - Vähä-Heikkilä, Tauno

AU - Baggen, R.

N1 - CA2: TK609 SDA: ICT

PY - 2013

Y1 - 2013

N2 - This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3=24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz)

AB - This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3=24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz)

KW - 0-level package

KW - low noise amplifiers

KW - MMIC

KW - packaging

KW - radio frequency micro-electromechanical systems

KW - switches

M3 - Conference article in proceedings

SN - 978-2-8748-7032-3

SP - 432

EP - 435

BT - Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013

ER -

Gustafsson A, Samuelsson C, Malmqvist R, Seok S, Fryziel M, Rolland N et al. A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC. In Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013. 2013. p. 432-435