Abstract
This paper focuses on the design of an RF-MEMS Dicke
switched wideband LNA realized in a GaAs MMIC process
that also includes a BCB cap type of wafer-level package.
The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB
of gain at 16-34 GHz when switched on. The off-state LNA
gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of
isolation (on and off). To the authors' knowledge, this
is the first time a 0-level packaged MEMS switched
wideband LNA MMIC with a high gain, isolation, linearity
(OIP3=24 dBm) and low noise figure is presented
(NF=2.5-3.0 dB at 15-26 GHz)
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013 |
| Publisher | European Microwave Association (EuMA) |
| Pages | 432-435 |
| ISBN (Print) | 978-2-8748-7032-3 |
| Publication status | Published - 2013 |
| MoE publication type | A4 Article in a conference publication |
| Event | 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013 - Nuremberg, Germany Duration: 1 Jan 2013 → … |
Conference
| Conference | 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013 |
|---|---|
| Country/Territory | Germany |
| City | Nuremberg |
| Period | 1/01/13 → … |
Keywords
- 0-level package
- low noise amplifiers
- MMIC
- packaging
- radio frequency micro-electromechanical systems
- switches