A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, N. Rolland, B. Grandchamp, Tauno Vähä-Heikkilä, R. Baggen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3=24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz)
    Original languageEnglish
    Title of host publicationProceedings of 8th European Microwave Integrated Circuits Conference, EuMIC 2013
    PublisherEuropean Microwave Association (EuMA)
    Pages432-435
    ISBN (Print)978-2-8748-7032-3
    Publication statusPublished - 2013
    MoE publication typeA4 Article in a conference publication
    Event8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013 - Nuremberg, Germany
    Duration: 1 Jan 2013 → …

    Conference

    Conference8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 6 - 8 October 2013
    CountryGermany
    CityNuremberg
    Period1/01/13 → …

    Keywords

    • 0-level package
    • low noise amplifiers
    • MMIC
    • packaging
    • radio frequency micro-electromechanical systems
    • switches

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