A 1.6 GHz current-controlled oscillator with integrated inductor

Esa Tarvainen, Hannu Ronkainen, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented.
The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.
Original languageEnglish
Pages (from-to)85 - 95
JournalAnalog Integrated Circuits and Signal Processing
Volume15
Issue number1
DOIs
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

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Silicon
Varactors
Networks (circuits)
Bipolar transistors
Phase noise
Metallizing
Equivalent circuits
Resonators
Energy dissipation
Integrated circuit design

Cite this

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title = "A 1.6 GHz current-controlled oscillator with integrated inductor",
abstract = "A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.",
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A 1.6 GHz current-controlled oscillator with integrated inductor. / Tarvainen, Esa; Ronkainen, Hannu; Kuivalainen, Pekka.

In: Analog Integrated Circuits and Signal Processing, Vol. 15, No. 1, 1998, p. 85 - 95.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A 1.6 GHz current-controlled oscillator with integrated inductor

AU - Tarvainen, Esa

AU - Ronkainen, Hannu

AU - Kuivalainen, Pekka

PY - 1998

Y1 - 1998

N2 - A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.

AB - A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.

U2 - 10.1023/A:1008240815438

DO - 10.1023/A:1008240815438

M3 - Article

VL - 15

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EP - 95

JO - Analog Integrated Circuits and Signal Processing

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SN - 0925-1030

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