A 1.6 GHz current-controlled oscillator with integrated inductor

Esa Tarvainen, Hannu Ronkainen, Pekka Kuivalainen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented.
    The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.
    Original languageEnglish
    Pages (from-to)85 - 95
    JournalAnalog Integrated Circuits and Signal Processing
    Volume15
    Issue number1
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    Varactors
    Networks (circuits)
    Bipolar transistors
    Phase noise
    Metallizing
    Equivalent circuits
    Resonators
    Energy dissipation
    Integrated circuit design

    Cite this

    @article{03ac07c26750494da9b1cb82806d85a8,
    title = "A 1.6 GHz current-controlled oscillator with integrated inductor",
    abstract = "A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.",
    author = "Esa Tarvainen and Hannu Ronkainen and Pekka Kuivalainen",
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    A 1.6 GHz current-controlled oscillator with integrated inductor. / Tarvainen, Esa; Ronkainen, Hannu; Kuivalainen, Pekka.

    In: Analog Integrated Circuits and Signal Processing, Vol. 15, No. 1, 1998, p. 85 - 95.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - A 1.6 GHz current-controlled oscillator with integrated inductor

    AU - Tarvainen, Esa

    AU - Ronkainen, Hannu

    AU - Kuivalainen, Pekka

    PY - 1998

    Y1 - 1998

    N2 - A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.

    AB - A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from −82 to −86 dBc/Hz at 100 kHz offset.

    U2 - 10.1023/A:1008240815438

    DO - 10.1023/A:1008240815438

    M3 - Article

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    SP - 85

    EP - 95

    JO - Analog Integrated Circuits and Signal Processing

    JF - Analog Integrated Circuits and Signal Processing

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