Abstract
A CMOS photogate active pixel sensor matrix was implemented. The sensor holds a 32 x 32 pixel matrix and every pixel consists of four transistors. The pixel dimension are 26 x 26 mm with a 50% fill factor. The pixel matrix is read out in sequential or random access mode and the out-put signal is analog. The measured conversion gain was 16 mV/e. The dynamic range was 63 dB @ 1.44 ms integration time. A fixed pattern noise was the dominant noise source especially in high illumination levels, 0.34-3.3% p-p of satu-ration level. The measured input referred noise was 56 electrons when exposure time was 1.44 ms. The dark signal was 330 mV/s at room temperature. The power consumption was 2 mW.
| Original language | English |
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| Title of host publication | Proceedings of the 8th Biennial Baltic Electronics Conference |
| Place of Publication | Tallinn |
| Publisher | Tallinna Tehnikaülikool |
| Pages | 107-110 |
| ISBN (Print) | 9985-59-292-1 |
| Publication status | Published - 2002 |
| MoE publication type | A4 Article in a conference publication |
| Event | 8th Biennial Baltic Electronics Conference, BEC 2002 - Tallinn, Estonia Duration: 6 Oct 2002 → 9 Oct 2002 |
Conference
| Conference | 8th Biennial Baltic Electronics Conference, BEC 2002 |
|---|---|
| Country/Territory | Estonia |
| City | Tallinn |
| Period | 6/10/02 → 9/10/02 |
Keywords
- CMOS
- Photogate
- active pixel
- sensors
- imager
- matrix