A 32x32 CMOS Photogate active pixel sensor matrix

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    A CMOS photogate active pixel sensor matrix was implemented. The sensor holds a 32 x 32 pixel matrix and every pixel consists of four transistors. The pixel dimension are 26 x 26 mm with a 50% fill factor. The pixel matrix is read out in sequential or random access mode and the out-put signal is analog. The measured conversion gain was 16 mV/e. The dynamic range was 63 dB @ 1.44 ms integration time. A fixed pattern noise was the dominant noise source especially in high illumination levels, 0.34-3.3% p-p of satu-ration level. The measured input referred noise was 56 electrons when exposure time was 1.44 ms. The dark signal was 330 mV/s at room temperature. The power consumption was 2 mW.
    Original languageEnglish
    Title of host publicationProceedings of the 8th Biennial Baltic Electronics Conference
    Place of PublicationTallinn
    Pages107-110
    Publication statusPublished - 2002
    MoE publication typeA4 Article in a conference publication
    Event8th Biennial Baltic Electronics Conference, BEC 2002 - Tallinn, Estonia
    Duration: 6 Oct 20029 Oct 2002

    Conference

    Conference8th Biennial Baltic Electronics Conference, BEC 2002
    CountryEstonia
    CityTallinn
    Period6/10/029/10/02

    Keywords

    • CMOS
    • Photogate
    • active pixel
    • sensors
    • imager
    • matrix

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  • Cite this

    Tukkiniemi, K. (2002). A 32x32 CMOS Photogate active pixel sensor matrix. In Proceedings of the 8th Biennial Baltic Electronics Conference (pp. 107-110).