TY - JOUR
T1 - A 400-GHz Graphene FET Detector
AU - Generalov, A.A.
AU - Andersson, M.A.
AU - Yang, X.
AU - Vorobiev, A.
AU - Stake, J.
N1 - Funding Information:
Manuscript received January 17, 2017; revised March 16, 2017, May 5, 2017, and May 29, 2017; accepted June 26, 2017. Date of publication July 14, 2017; date of current version September 13, 2017. This work was supported in part by Chalmers Area of Advance, in part by EU Graphene Flagship, and in part by the Knut and Alice Wallenberg Foundation. (Corresponding Author: Andrey A. Generalov.) The authors are with the Terahertz and Millimetre Wave Laboratory, Department of Microtechnology and Nanoscience–MC2, Chalmers University of Technology, 41296 Göteborg, Sweden (e-mail: gandrey@chalmers.se).
Publisher Copyright:
© 2011-2012 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz
1/2. This letter shows how the detector performance degrades as a function of the residual carrier concentration in the graphene channel, which is an important material parameter that depends on the quality of the graphene sheet and contaminants introduced during the fabrication process. In this work, the exposure of the graphene channel to liquid processes is minimized resulting in a low residual carrier concentration. This is in part, an important contributing factor to achieve the record high GFET detector performance. Thus, our results show the importance to use graphene with high quality and the importance to minimize contamination during the fabrication process.
AB - This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz
1/2. This letter shows how the detector performance degrades as a function of the residual carrier concentration in the graphene channel, which is an important material parameter that depends on the quality of the graphene sheet and contaminants introduced during the fabrication process. In this work, the exposure of the graphene channel to liquid processes is minimized resulting in a low residual carrier concentration. This is in part, an important contributing factor to achieve the record high GFET detector performance. Thus, our results show the importance to use graphene with high quality and the importance to minimize contamination during the fabrication process.
UR - http://www.scopus.com/inward/record.url?scp=85028946024&partnerID=8YFLogxK
U2 - 10.1109/TTHZ.2017.2722360
DO - 10.1109/TTHZ.2017.2722360
M3 - Article
VL - 7
SP - 614
EP - 616
JO - IEEE Transactions on Terahertz Science and Technology
JF - IEEE Transactions on Terahertz Science and Technology
SN - 2156-342X
IS - 5
ER -