A 400-GHz Graphene FET Detector

A.A. Generalov, M.A. Andersson, X. Yang, A. Vorobiev, J. Stake

Research output: Contribution to journalArticleScientificpeer-review

56 Citations (Scopus)


This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz 1/2. This letter shows how the detector performance degrades as a function of the residual carrier concentration in the graphene channel, which is an important material parameter that depends on the quality of the graphene sheet and contaminants introduced during the fabrication process. In this work, the exposure of the graphene channel to liquid processes is minimized resulting in a low residual carrier concentration. This is in part, an important contributing factor to achieve the record high GFET detector performance. Thus, our results show the importance to use graphene with high quality and the importance to minimize contamination during the fabrication process.

Original languageEnglish
Pages (from-to)614-616
Number of pages3
JournalIEEE Transactions on Terahertz Science and Technology
Issue number5
Publication statusPublished - 2017
MoE publication typeA1 Journal article-refereed


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