Abstract
This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.
Original language | English |
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Article number | 7837635 |
Pages (from-to) | 171-173 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 27 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2017 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Amplifier
- broadband amplifiers
- CMOS
- LNA
- millimeter-wave integrated circuits
- W-band