A 53-117 GHz LNA in 28-nm FDSOI CMOS

Denizhan Karaca, Mikko Varonen, Dristy Parveg, Ali Vahdati, Kari A.I. Halonen

Research output: Contribution to journalArticleScientificpeer-review

26 Citations (Scopus)


This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

Original languageEnglish
Article number7837635
Pages (from-to)171-173
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number2
Publication statusPublished - Feb 2017
MoE publication typeA1 Journal article-refereed


  • Amplifier
  • broadband amplifiers
  • CMOS
  • LNA
  • millimeter-wave integrated circuits
  • W-band


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