A 53-117 GHz LNA in 28-nm FDSOI CMOS

Denizhan Karaca; Mikko Varonen; Dristy Parveg; Ali Vahdati; Kari A.I. Halonen

doi:10.1109/LMWC.2016.2646912

A 53-117 GHz LNA in 28-nm FDSOI CMOS

Denizhan Karaca
, Mikko Varonen
, Dristy Parveg
, Ali Vahdati
, Kari A.I. Halonen

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

30 Citations (Scopus)

Abstract

This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

Original language	English
Article number	7837635
Pages (from-to)	171-173
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2016.2646912
Publication status	Published - Feb 2017
MoE publication type	A1 Journal article-refereed

Keywords

Amplifier
broadband amplifiers
CMOS
LNA
millimeter-wave integrated circuits
W-band

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10.1109/LMWC.2016.2646912

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title = "A 53-117 GHz LNA in 28-nm FDSOI CMOS",

abstract = "This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.",

keywords = "Amplifier, broadband amplifiers, CMOS, LNA, millimeter-wave integrated circuits, W-band",

author = "Denizhan Karaca and Mikko Varonen and Dristy Parveg and Ali Vahdati and Halonen, \{Kari A.I.\}",

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AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Vahdati, Ali

AU - Halonen, Kari A.I.

PY - 2017/2

Y1 - 2017/2

N2 - This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

AB - This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.

KW - Amplifier

KW - broadband amplifiers

KW - CMOS

KW - LNA

KW - millimeter-wave integrated circuits

KW - W-band

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

M1 - 7837635

ER -

A 53-117 GHz LNA in 28-nm FDSOI CMOS

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