A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Raju Ahamed (Corresponding Author), Mikko Varonen, Jan Holmberg, Dristy Parveg, Mikko Kantanen, Jan Saijets, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    Original languageEnglish
    Pages (from-to)465-476
    Number of pages12
    JournalAnalog Integrated Circuits and Signal Processing
    Volume98
    Issue number3
    DOIs
    Publication statusPublished - 15 Mar 2019
    MoE publication typeA1 Journal article-refereed

    Keywords

    • BiCMOS
    • Heterojunction bipolar transistor (HBT)
    • LNA
    • Millimeter-wave
    • MMIC
    • PALNA
    • Phase shifter
    • Phased arrays
    • SiGe
    • Switch
    • Transformer balun
    • OtaNano

    Fingerprint

    Dive into the research topics of 'A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology'. Together they form a unique fingerprint.

    Cite this