A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Raju Ahamed (Corresponding Author), Mikko Varonen, Jan Holmberg, Dristy Parveg, Mikko Kantanen, Jan Saijets, Kari A.I. Halonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

Original languageEnglish
Pages (from-to)465-476
Number of pages12
JournalAnalog Integrated Circuits and Signal Processing
Volume98
Issue number3
DOIs
Publication statusPublished - 15 Mar 2019
MoE publication typeA1 Journal article-refereed

Fingerprint

BiCMOS technology
Low noise amplifiers
Phase shifters
Switches
Buffer amplifiers
Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Noise figure
Millimeter waves
Transmitters
Communication systems
Topology
Antennas
Bandwidth

Keywords

  • BiCMOS
  • Heterojunction bipolar transistor (HBT)
  • LNA
  • Millimeter-wave
  • MMIC
  • PALNA
  • Phase shifter
  • Phased arrays
  • SiGe
  • Switch
  • Transformer balun

Cite this

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title = "A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology",
abstract = "This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).",
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A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju (Corresponding Author); Varonen, Mikko; Holmberg, Jan; Parveg, Dristy; Kantanen, Mikko; Saijets, Jan; Halonen, Kari A.I.

In: Analog Integrated Circuits and Signal Processing, Vol. 98, No. 3, 15.03.2019, p. 465-476.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Holmberg, Jan

AU - Parveg, Dristy

AU - Kantanen, Mikko

AU - Saijets, Jan

AU - Halonen, Kari A.I.

PY - 2019/3/15

Y1 - 2019/3/15

N2 - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

AB - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

KW - BiCMOS

KW - Heterojunction bipolar transistor (HBT)

KW - LNA

KW - Millimeter-wave

KW - MMIC

KW - PALNA

KW - Phase shifter

KW - Phased arrays

KW - SiGe

KW - Switch

KW - Transformer balun

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U2 - 10.1007/s10470-018-1268-4

DO - 10.1007/s10470-018-1268-4

M3 - Article

VL - 98

SP - 465

EP - 476

JO - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

SN - 0925-1030

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ER -