A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Raju Ahamed (Corresponding Author), Mikko Varonen, Jan Holmberg, Dristy Parveg, Mikko Kantanen, Jan Saijets, Kari A.I. Halonen

Research output: Contribution to journalArticleResearchpeer-review

Abstract

This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

LanguageEnglish
Pages1-12
Number of pages12
JournalAnalog Integrated Circuits and Signal Processing
DOIs
Publication statusAccepted/In press - 9 Jul 2018

Fingerprint

BiCMOS technology
Low noise amplifiers
Phase shifters
Switches
Buffer amplifiers
Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Noise figure
Millimeter waves
Transmitters
Communication systems
Topology
Antennas
Bandwidth

Keywords

  • BiCMOS
  • Heterojunction bipolar transistor (HBT)
  • LNA
  • Millimeter-wave
  • MMIC
  • PALNA
  • Phase shifter
  • Phased arrays
  • SiGe
  • Switch
  • Transformer balun

Cite this

@article{3b8bac3e502f4b3b872b7e25638507c6,
title = "A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology",
abstract = "This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).",
keywords = "BiCMOS, Heterojunction bipolar transistor (HBT), LNA, Millimeter-wave, MMIC, PALNA, Phase shifter, Phased arrays, SiGe, Switch, Transformer balun",
author = "Raju Ahamed and Mikko Varonen and Jan Holmberg and Dristy Parveg and Mikko Kantanen and Jan Saijets and Halonen, {Kari A.I.}",
year = "2018",
month = "7",
day = "9",
doi = "10.1007/s10470-018-1268-4",
language = "English",
pages = "1--12",
journal = "Analog Integrated Circuits and Signal Processing",
issn = "0925-1030",
publisher = "Springer",

}

A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju (Corresponding Author); Varonen, Mikko; Holmberg, Jan; Parveg, Dristy; Kantanen, Mikko; Saijets, Jan; Halonen, Kari A.I.

In: Analog Integrated Circuits and Signal Processing, 09.07.2018, p. 1-12.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Holmberg, Jan

AU - Parveg, Dristy

AU - Kantanen, Mikko

AU - Saijets, Jan

AU - Halonen, Kari A.I.

PY - 2018/7/9

Y1 - 2018/7/9

N2 - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

AB - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

KW - BiCMOS

KW - Heterojunction bipolar transistor (HBT)

KW - LNA

KW - Millimeter-wave

KW - MMIC

KW - PALNA

KW - Phase shifter

KW - Phased arrays

KW - SiGe

KW - Switch

KW - Transformer balun

UR - http://www.scopus.com/inward/record.url?scp=85049643908&partnerID=8YFLogxK

U2 - 10.1007/s10470-018-1268-4

DO - 10.1007/s10470-018-1268-4

M3 - Article

SP - 1

EP - 12

JO - Analog Integrated Circuits and Signal Processing

T2 - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

SN - 0925-1030

ER -