A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Raju Ahamed (Corresponding Author), Mikko Varonen, Jan Holmberg, Dristy Parveg, Mikko Kantanen, Jan Saijets, Kari A.I. Halonen

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    LanguageEnglish
    Pages1-12
    Number of pages12
    JournalAnalog Integrated Circuits and Signal Processing
    DOIs
    Publication statusAccepted/In press - 9 Jul 2018

    Fingerprint

    BiCMOS technology
    Low noise amplifiers
    Phase shifters
    Switches
    Buffer amplifiers
    Monolithic microwave integrated circuits
    Heterojunction bipolar transistors
    Noise figure
    Millimeter waves
    Transmitters
    Communication systems
    Topology
    Antennas
    Bandwidth

    Keywords

    • BiCMOS
    • Heterojunction bipolar transistor (HBT)
    • LNA
    • Millimeter-wave
    • MMIC
    • PALNA
    • Phase shifter
    • Phased arrays
    • SiGe
    • Switch
    • Transformer balun

    OKM Publication Types

    • A1 Refereed journal article

    OKM Open Access Status

    • 0 Not Open Access

    ASJC Scopus subject areas

    • Signal Processing
    • Hardware and Architecture
    • Surfaces, Coatings and Films

    Cite this

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    title = "A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology",
    abstract = "This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).",
    keywords = "BiCMOS, Heterojunction bipolar transistor (HBT), LNA, Millimeter-wave, MMIC, PALNA, Phase shifter, Phased arrays, SiGe, Switch, Transformer balun",
    author = "Raju Ahamed and Mikko Varonen and Jan Holmberg and Dristy Parveg and Mikko Kantanen and Jan Saijets and Halonen, {Kari A.I.}",
    year = "2018",
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    doi = "10.1007/s10470-018-1268-4",
    language = "English",
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    A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju (Corresponding Author); Varonen, Mikko; Holmberg, Jan; Parveg, Dristy; Kantanen, Mikko; Saijets, Jan; Halonen, Kari A.I.

    In: Analog Integrated Circuits and Signal Processing, 09.07.2018, p. 1-12.

    Research output: Contribution to journalArticleResearchpeer-review

    TY - JOUR

    T1 - A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

    AU - Ahamed, Raju

    AU - Varonen, Mikko

    AU - Holmberg, Jan

    AU - Parveg, Dristy

    AU - Kantanen, Mikko

    AU - Saijets, Jan

    AU - Halonen, Kari A.I.

    PY - 2018/7/9

    Y1 - 2018/7/9

    N2 - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    AB - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

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    KW - Heterojunction bipolar transistor (HBT)

    KW - LNA

    KW - Millimeter-wave

    KW - MMIC

    KW - PALNA

    KW - Phase shifter

    KW - Phased arrays

    KW - SiGe

    KW - Switch

    KW - Transformer balun

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    U2 - 10.1007/s10470-018-1268-4

    DO - 10.1007/s10470-018-1268-4

    M3 - Article

    SP - 1

    EP - 12

    JO - Analog Integrated Circuits and Signal Processing

    T2 - Analog Integrated Circuits and Signal Processing

    JF - Analog Integrated Circuits and Signal Processing

    SN - 0925-1030

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