A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

Raju Ahamed (Corresponding Author), Mikko Varonen, Jan Holmberg, Dristy Parveg, Mikko Kantanen, Jan Saijets, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    Original languageEnglish
    Pages (from-to)465-476
    Number of pages12
    JournalAnalog Integrated Circuits and Signal Processing
    Volume98
    Issue number3
    DOIs
    Publication statusPublished - 15 Mar 2019
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    BiCMOS technology
    Low noise amplifiers
    Phase shifters
    Switches
    Buffer amplifiers
    Monolithic microwave integrated circuits
    Heterojunction bipolar transistors
    Noise figure
    Millimeter waves
    Transmitters
    Communication systems
    Topology
    Antennas
    Bandwidth

    Keywords

    • BiCMOS
    • Heterojunction bipolar transistor (HBT)
    • LNA
    • Millimeter-wave
    • MMIC
    • PALNA
    • Phase shifter
    • Phased arrays
    • SiGe
    • Switch
    • Transformer balun

    Cite this

    @article{3b8bac3e502f4b3b872b7e25638507c6,
    title = "A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology",
    abstract = "This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).",
    keywords = "BiCMOS, Heterojunction bipolar transistor (HBT), LNA, Millimeter-wave, MMIC, PALNA, Phase shifter, Phased arrays, SiGe, Switch, Transformer balun",
    author = "Raju Ahamed and Mikko Varonen and Jan Holmberg and Dristy Parveg and Mikko Kantanen and Jan Saijets and Halonen, {Kari A.I.}",
    year = "2019",
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    journal = "Analog Integrated Circuits and Signal Processing",
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    }

    A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju (Corresponding Author); Varonen, Mikko; Holmberg, Jan; Parveg, Dristy; Kantanen, Mikko; Saijets, Jan; Halonen, Kari A.I.

    In: Analog Integrated Circuits and Signal Processing, Vol. 98, No. 3, 15.03.2019, p. 465-476.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

    AU - Ahamed, Raju

    AU - Varonen, Mikko

    AU - Holmberg, Jan

    AU - Parveg, Dristy

    AU - Kantanen, Mikko

    AU - Saijets, Jan

    AU - Halonen, Kari A.I.

    PY - 2019/3/15

    Y1 - 2019/3/15

    N2 - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    AB - This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).

    KW - BiCMOS

    KW - Heterojunction bipolar transistor (HBT)

    KW - LNA

    KW - Millimeter-wave

    KW - MMIC

    KW - PALNA

    KW - Phase shifter

    KW - Phased arrays

    KW - SiGe

    KW - Switch

    KW - Transformer balun

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    U2 - 10.1007/s10470-018-1268-4

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