Abstract
This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13 (Formula presented.)m SiGe BiCMOS technology for phased array applications. The receiver front-end is suitable for a phased array time-division duplexing communication system where both the transmitter and the receiver share the same antenna. The monolithic microwave integrated circuit front-end comprises of quarter-wave shunt switches, a low-noise amplifier (LNA), an active phase shifter and a buffer amplifier. The quarter-wave shunt switch is designed using reverse-saturated SiGe HBTs. The transformer-based LNA utilizes a common-emitter amplifier at the first stage and a cascode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The designed switch is incorporated in the input matching network of the LNA. The active phase shifter consists of variable gain amplifiers driven by a polyphase filter-based quadrature generator. The receiver front-end achieves a measured gain of 18.5 dB and a noise figure of 9 dB with a 3 dB bandwidth of 23 GHz from 56 to 79 GHz. The receiver phase can be tuned continuously from 0(Formula presented.) to 360(Formula presented.). An output referred 1-dB compression point of (Formula presented.) 7.4 dBm is achieved at 70 GHz. The receiver consumes 116 mW of DC power and occupies a core area of (Formula presented.).
Original language | English |
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Pages (from-to) | 465-476 |
Number of pages | 12 |
Journal | Analog Integrated Circuits and Signal Processing |
Volume | 98 |
Issue number | 3 |
DOIs | |
Publication status | Published - 15 Mar 2019 |
MoE publication type | A1 Journal article-refereed |
Keywords
- BiCMOS
- Heterojunction bipolar transistor (HBT)
- LNA
- Millimeter-wave
- MMIC
- PALNA
- Phase shifter
- Phased arrays
- SiGe
- Switch
- Transformer balun
- OtaNano