A batch process to deposit amorphous metallic Mo-Si-N films

Hannu Kattelus, Hannele Heikkinen, Ari Häärä, Mari Ylönen, Tolkki

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.
    Original languageEnglish
    Pages (from-to)427-430
    Number of pages4
    JournalJournal of Materials Science: Materials in Electronics
    Volume14
    Issue number5-7
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Deposits
    deposits
    Molybdenum
    Silicon
    molybdenum
    Argon
    argon
    electrical resistivity
    Conductive films
    Reactive sputtering
    silicon
    silicon films
    Electron diffraction
    gas flow
    Flow of gases
    Film thickness
    film thickness
    Nitrogen
    electron diffraction
    flow velocity

    Keywords

    • Amorphous metals, Mo-Si-N, metallic micromachining

    Cite this

    Kattelus, Hannu ; Heikkinen, Hannele ; Häärä, Ari ; Ylönen, Mari ; Tolkki. / A batch process to deposit amorphous metallic Mo-Si-N films. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5-7. pp. 427-430.
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    title = "A batch process to deposit amorphous metallic Mo-Si-N films",
    abstract = "A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.",
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    author = "Hannu Kattelus and Hannele Heikkinen and Ari H{\"a}{\"a}r{\"a} and Mari Yl{\"o}nen and Tolkki",
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    Kattelus, H, Heikkinen, H, Häärä, A, Ylönen, M & Tolkki 2003, 'A batch process to deposit amorphous metallic Mo-Si-N films', Journal of Materials Science: Materials in Electronics, vol. 14, no. 5-7, pp. 427-430. https://doi.org/10.1023/A:1023925423733

    A batch process to deposit amorphous metallic Mo-Si-N films. / Kattelus, Hannu; Heikkinen, Hannele; Häärä, Ari; Ylönen, Mari; Tolkki.

    In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5-7, 2003, p. 427-430.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - A batch process to deposit amorphous metallic Mo-Si-N films

    AU - Kattelus, Hannu

    AU - Heikkinen, Hannele

    AU - Häärä, Ari

    AU - Ylönen, Mari

    AU - Tolkki, null

    PY - 2003

    Y1 - 2003

    N2 - A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.

    AB - A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.

    KW - Amorphous metals, Mo-Si-N, metallic micromachining

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    JO - Journal of Materials Science: Materials in Electronics

    JF - Journal of Materials Science: Materials in Electronics

    SN - 0957-4522

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    ER -