A batch process to deposit amorphous metallic Mo-Si-N films

Hannu Kattelus, Hannele Heikkinen, Ari Häärä, Mari Ylönen, Tolkki

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.
Original languageEnglish
Pages (from-to)427-430
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number5-7
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Deposits
deposits
Molybdenum
Silicon
molybdenum
Argon
argon
electrical resistivity
Conductive films
Reactive sputtering
silicon
silicon films
Electron diffraction
gas flow
Flow of gases
Film thickness
film thickness
Nitrogen
electron diffraction
flow velocity

Keywords

  • Amorphous metals, Mo-Si-N, metallic micromachining

Cite this

Kattelus, Hannu ; Heikkinen, Hannele ; Häärä, Ari ; Ylönen, Mari ; Tolkki. / A batch process to deposit amorphous metallic Mo-Si-N films. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5-7. pp. 427-430.
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abstract = "A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.",
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Kattelus, H, Heikkinen, H, Häärä, A, Ylönen, M & Tolkki 2003, 'A batch process to deposit amorphous metallic Mo-Si-N films', Journal of Materials Science: Materials in Electronics, vol. 14, no. 5-7, pp. 427-430. https://doi.org/10.1023/A:1023925423733

A batch process to deposit amorphous metallic Mo-Si-N films. / Kattelus, Hannu; Heikkinen, Hannele; Häärä, Ari; Ylönen, Mari; Tolkki.

In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5-7, 2003, p. 427-430.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A batch process to deposit amorphous metallic Mo-Si-N films

AU - Kattelus, Hannu

AU - Heikkinen, Hannele

AU - Häärä, Ari

AU - Ylönen, Mari

AU - Tolkki, null

PY - 2003

Y1 - 2003

N2 - A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.

AB - A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo31Si18N45 film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.

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U2 - 10.1023/A:1023925423733

DO - 10.1023/A:1023925423733

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JO - Journal of Materials Science: Materials in Electronics

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