Abstract
This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of-3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm2, consuming less than 66 mW of dc power.
| Original language | English |
|---|---|
| Article number | 9266100 |
| Pages (from-to) | 157-160 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 31 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 2021 |
| MoE publication type | A1 Journal article-refereed |
Funding
Manuscript received September 2, 2020; revised October 26, 2020; accepted November 3, 2020. Date of publication November 23, 2020; date of current version February 11, 2021. This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Programme under Grant 761390, acronym: DREAM and in part by the Spanish Ministry of Economy and Competitiveness under Grant PID2019-109984RB-C44, acronym: milliRAD. (Corresponding author: David del Rio.) David del Rio, Iñaki Gurutzeaga, and Juan Francisco Sevillano are with the CEIT-Basque Research and Technology Alliance (BRTA), 20018 Donostia -San Sebastian, Spain, and also with the Department of Electrical and Electronic Engineering, Technological Campus of the University of Navarra (TECNUN), 20018 Donostia - San Sebastian, Spain (e-mail: [email protected]).
Keywords
- BiCMOS
- millimeter-wave (mmW)
- phase shifter (PS)
- radio frequency integrated circuit (RFIC)