TY - JOUR
T1 - A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS
AU - Rio, David Del
AU - Gurutzeaga, Iñaki
AU - Berenguer, Roc
AU - Huhtinen, Ismo
AU - Sevillano, Juan Francisco
N1 - Funding Information:
Manuscript received September 2, 2020; revised October 26, 2020; accepted November 3, 2020. Date of publication November 23, 2020; date of current version February 11, 2021. This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Programme under Grant 761390, acronym: DREAM and in part by the Spanish Ministry of Economy and Competitiveness under Grant PID2019-109984RB-C44, acronym: milliRAD. (Corresponding author: David del Rio.) David del Rio, Iñaki Gurutzeaga, and Juan Francisco Sevillano are with the CEIT-Basque Research and Technology Alliance (BRTA), 20018 Donostia -San Sebastian, Spain, and also with the Department of Electrical and Electronic Engineering, Technological Campus of the University of Navarra (TECNUN), 20018 Donostia - San Sebastian, Spain (e-mail: ddelrio@ceit.es).
Publisher Copyright:
© 2001-2012 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2
Y1 - 2021/2
N2 - This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of-3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm2, consuming less than 66 mW of dc power.
AB - This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of-3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm2, consuming less than 66 mW of dc power.
KW - BiCMOS
KW - millimeter-wave (mmW)
KW - phase shifter (PS)
KW - radio frequency integrated circuit (RFIC)
UR - http://www.scopus.com/inward/record.url?scp=85097209121&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2020.3037162
DO - 10.1109/LMWC.2020.3037162
M3 - Article
AN - SCOPUS:85097209121
VL - 31
SP - 157
EP - 160
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 2
M1 - 9266100
ER -