A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS

David Del Rio, Iñaki Gurutzeaga, Roc Berenguer, Ismo Huhtinen, Juan Francisco Sevillano

    Research output: Contribution to journalArticleScientificpeer-review

    26 Citations (Scopus)

    Abstract

    This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of-3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm2, consuming less than 66 mW of dc power.

    Original languageEnglish
    Article number9266100
    Pages (from-to)157-160
    JournalIEEE Microwave and Wireless Components Letters
    Volume31
    Issue number2
    DOIs
    Publication statusPublished - Feb 2021
    MoE publication typeA1 Journal article-refereed

    Keywords

    • BiCMOS
    • millimeter-wave (mmW)
    • phase shifter (PS)
    • radio frequency integrated circuit (RFIC)

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