A compact model for the cutoff frequency in high speed bipolar transistors

Mikael Andersson, Pekka Kuivalainen, Zheng Xia, Helena Pohjonen, Hannu Ronkainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.
Original languageEnglish
Pages (from-to)136-138
Number of pages3
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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SiGe
Heterojunction
bipolar transistors
High Speed
cut-off
high speed
Heterostructures
Integrated Circuits
Physical Model
Physical property
heterojunction devices
junction transistors
Silicon
Simulator
Physics
simulators
integrated circuits
heterojunctions
transistors
physical properties

Cite this

Andersson, Mikael ; Kuivalainen, Pekka ; Xia, Zheng ; Pohjonen, Helena ; Ronkainen, Hannu. / A compact model for the cutoff frequency in high speed bipolar transistors. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 136-138.
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abstract = "A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.",
author = "Mikael Andersson and Pekka Kuivalainen and Zheng Xia and Helena Pohjonen and Hannu Ronkainen",
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year = "1994",
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language = "English",
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A compact model for the cutoff frequency in high speed bipolar transistors. / Andersson, Mikael; Kuivalainen, Pekka; Xia, Zheng; Pohjonen, Helena; Ronkainen, Hannu.

In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 136-138.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A compact model for the cutoff frequency in high speed bipolar transistors

AU - Andersson, Mikael

AU - Kuivalainen, Pekka

AU - Xia, Zheng

AU - Pohjonen, Helena

AU - Ronkainen, Hannu

N1 - Project code: ELE41061

PY - 1994

Y1 - 1994

N2 - A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.

AB - A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.

U2 - 10.1088/0031-8949/1994/T54/032

DO - 10.1088/0031-8949/1994/T54/032

M3 - Article

VL - 1994

SP - 136

EP - 138

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T54

ER -