A compact model for the cutoff frequency in high speed bipolar transistors

Mikael Andersson, Pekka Kuivalainen, Zheng Xia, Helena Pohjonen, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.
    Original languageEnglish
    Pages (from-to)136-138
    Number of pages3
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

      Fingerprint

    Cite this