A compact model for the cutoff frequency in high speed bipolar transistors

Mikael Andersson, Pekka Kuivalainen, Zheng Xia, Helena Pohjonen, Hannu Ronkainen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.
    Original languageEnglish
    Pages (from-to)136-138
    Number of pages3
    JournalPhysica Scripta
    Volume1994
    Issue numberT54
    DOIs
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    SiGe
    Heterojunction
    bipolar transistors
    High Speed
    cut-off
    high speed
    Heterostructures
    Integrated Circuits
    Physical Model
    Physical property
    heterojunction devices
    junction transistors
    Silicon
    Simulator
    Physics
    simulators
    integrated circuits
    heterojunctions
    transistors
    physical properties

    Cite this

    Andersson, Mikael ; Kuivalainen, Pekka ; Xia, Zheng ; Pohjonen, Helena ; Ronkainen, Hannu. / A compact model for the cutoff frequency in high speed bipolar transistors. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 136-138.
    @article{03b4e134d6e541d69abd6c6bc5613dee,
    title = "A compact model for the cutoff frequency in high speed bipolar transistors",
    abstract = "A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.",
    author = "Mikael Andersson and Pekka Kuivalainen and Zheng Xia and Helena Pohjonen and Hannu Ronkainen",
    note = "Project code: ELE41061",
    year = "1994",
    doi = "10.1088/0031-8949/1994/T54/032",
    language = "English",
    volume = "1994",
    pages = "136--138",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",
    number = "T54",

    }

    A compact model for the cutoff frequency in high speed bipolar transistors. / Andersson, Mikael; Kuivalainen, Pekka; Xia, Zheng; Pohjonen, Helena; Ronkainen, Hannu.

    In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 136-138.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - A compact model for the cutoff frequency in high speed bipolar transistors

    AU - Andersson, Mikael

    AU - Kuivalainen, Pekka

    AU - Xia, Zheng

    AU - Pohjonen, Helena

    AU - Ronkainen, Hannu

    N1 - Project code: ELE41061

    PY - 1994

    Y1 - 1994

    N2 - A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.

    AB - A compact physical model for high speed bipolar junction transistors (BJT) in integrated rf-circuits is presented. The model, which suits both homo-and heterojunction devices, is based on the de Graaf-Kloosterman formalism for the modelling of BJTs, but adds important heterostructure device physics and incorporates also the physical properties of the SiGe material. The model implemented in APLAC circuit simulator, shows good agreement between the simulation results and measured data both for pure silicon BJTs and for SiGe-base heterojunction transistors.

    U2 - 10.1088/0031-8949/1994/T54/032

    DO - 10.1088/0031-8949/1994/T54/032

    M3 - Article

    VL - 1994

    SP - 136

    EP - 138

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T54

    ER -