A compact quantum statistical model for the ballistic nanoscale MOSFETs

A. Varpula, N. Lebedeva, P. Kuivalainen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We develop an analytical quantum statistical model for nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). The model describes transport both in the scattering-limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I-V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large-scale integrated circuits.

Original languageEnglish
Pages (from-to)1726-1732
JournalPhysica Status Solidi A: Applications and Materials Science
Volume208
Issue number7
DOIs
Publication statusPublished - Jul 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

MOSFET devices
Ballistics
metal oxide semiconductors
ballistics
field effect transistors
Scattering
scattering
Bias voltage
Green's function
Integrated circuits
integrated circuits
Green's functions
Statistical Models
electric potential

Keywords

  • ballistic transport
  • Green's functions
  • MOSFET
  • quantum transport

Cite this

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abstract = "We develop an analytical quantum statistical model for nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). The model describes transport both in the scattering-limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I-V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large-scale integrated circuits.",
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A compact quantum statistical model for the ballistic nanoscale MOSFETs. / Varpula, A.; Lebedeva, N.; Kuivalainen, P. (Corresponding Author).

In: Physica Status Solidi A: Applications and Materials Science, Vol. 208, No. 7, 07.2011, p. 1726-1732.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kuivalainen, P.

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N2 - We develop an analytical quantum statistical model for nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). The model describes transport both in the scattering-limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I-V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large-scale integrated circuits.

AB - We develop an analytical quantum statistical model for nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). The model describes transport both in the scattering-limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I-V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large-scale integrated circuits.

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