A comparative study of Si and GaAs metal-semiconductor-metal photodetectors

Katri Honkanen, Timo Siirtola, Tero Majamaa, Anssi Hovinen, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

In this paper we present a comparative study of the optical DC and transient properties of the Si- and GaAs-metal-semiconductor-metal photodetectors (MSM-PD's). The interdigitated metal fingers for the detectors were fabricated on n-type Si and semi-insulating GaAs substrates by using optical lithography and lift-off technique. The width and spacing of the interdigitated metal fingers varied between 1 and 2 μm, and the detector area varied between 100 × 100 μm2 and 500 × 500 μm2. For Si-MSM-PD's we used 150 nm thick aluminum and for GaAs-MSM-PD's 280 nm thick Ti/Pt/Au multilayer metallization for the Schottky barrier formation. The Schottky diode capacitance vs. bias voltage as well as dark and illuminated I-V characteristics as a function of optical power have been measured. Also the photoresponsivity vs. wavelength has been measured for various bias voltages. The speed of the detectors was studied by using a colliding pulse mode-locked laser. The experimental results show that the leakage currents in GaAs-MSM detectors are much smaller than in Si detectors, but still a reasonable photoresponsivity can be achieved also in Si detectors. The speed of the Si detectors could be improved by fabricating them on an epitaxial n+ - n -structure, which results in a fast impulse response 625 ps (FWHM), 292 ps (fall time).

Original languageEnglish
Pages (from-to)163 - 166
Number of pages4
JournalPhysica Scripta
VolumeT69
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Photodetector
Gallium Arsenide
Comparative Study
photometers
Semiconductors
Metals
Detector
detectors
metals
Voltage
Marginal Structural Models
MSM (semiconductors)
Mode-locked Lasers
Optical Lithography
Leakage Current
electric potential
Impulse Response
Capacitance
Schottky diodes
Diode

Cite this

Honkanen, K., Siirtola, T., Majamaa, T., Hovinen, A., & Kuivalainen, P. (1997). A comparative study of Si and GaAs metal-semiconductor-metal photodetectors. Physica Scripta, T69, 163 - 166. https://doi.org/10.1088/0031-8949/1997/T69/030
Honkanen, Katri ; Siirtola, Timo ; Majamaa, Tero ; Hovinen, Anssi ; Kuivalainen, Pekka. / A comparative study of Si and GaAs metal-semiconductor-metal photodetectors. In: Physica Scripta. 1997 ; Vol. T69. pp. 163 - 166.
@article{c63adc673b2d494998f1bc13f0b6ef46,
title = "A comparative study of Si and GaAs metal-semiconductor-metal photodetectors",
abstract = "In this paper we present a comparative study of the optical DC and transient properties of the Si- and GaAs-metal-semiconductor-metal photodetectors (MSM-PD's). The interdigitated metal fingers for the detectors were fabricated on n-type Si and semi-insulating GaAs substrates by using optical lithography and lift-off technique. The width and spacing of the interdigitated metal fingers varied between 1 and 2 μm, and the detector area varied between 100 × 100 μm2 and 500 × 500 μm2. For Si-MSM-PD's we used 150 nm thick aluminum and for GaAs-MSM-PD's 280 nm thick Ti/Pt/Au multilayer metallization for the Schottky barrier formation. The Schottky diode capacitance vs. bias voltage as well as dark and illuminated I-V characteristics as a function of optical power have been measured. Also the photoresponsivity vs. wavelength has been measured for various bias voltages. The speed of the detectors was studied by using a colliding pulse mode-locked laser. The experimental results show that the leakage currents in GaAs-MSM detectors are much smaller than in Si detectors, but still a reasonable photoresponsivity can be achieved also in Si detectors. The speed of the Si detectors could be improved by fabricating them on an epitaxial n+ - n− -structure, which results in a fast impulse response 625 ps (FWHM), 292 ps (fall time).",
author = "Katri Honkanen and Timo Siirtola and Tero Majamaa and Anssi Hovinen and Pekka Kuivalainen",
year = "1997",
doi = "10.1088/0031-8949/1997/T69/030",
language = "English",
volume = "T69",
pages = "163 -- 166",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",

}

Honkanen, K, Siirtola, T, Majamaa, T, Hovinen, A & Kuivalainen, P 1997, 'A comparative study of Si and GaAs metal-semiconductor-metal photodetectors', Physica Scripta, vol. T69, pp. 163 - 166. https://doi.org/10.1088/0031-8949/1997/T69/030

A comparative study of Si and GaAs metal-semiconductor-metal photodetectors. / Honkanen, Katri; Siirtola, Timo; Majamaa, Tero; Hovinen, Anssi; Kuivalainen, Pekka.

In: Physica Scripta, Vol. T69, 1997, p. 163 - 166.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A comparative study of Si and GaAs metal-semiconductor-metal photodetectors

AU - Honkanen, Katri

AU - Siirtola, Timo

AU - Majamaa, Tero

AU - Hovinen, Anssi

AU - Kuivalainen, Pekka

PY - 1997

Y1 - 1997

N2 - In this paper we present a comparative study of the optical DC and transient properties of the Si- and GaAs-metal-semiconductor-metal photodetectors (MSM-PD's). The interdigitated metal fingers for the detectors were fabricated on n-type Si and semi-insulating GaAs substrates by using optical lithography and lift-off technique. The width and spacing of the interdigitated metal fingers varied between 1 and 2 μm, and the detector area varied between 100 × 100 μm2 and 500 × 500 μm2. For Si-MSM-PD's we used 150 nm thick aluminum and for GaAs-MSM-PD's 280 nm thick Ti/Pt/Au multilayer metallization for the Schottky barrier formation. The Schottky diode capacitance vs. bias voltage as well as dark and illuminated I-V characteristics as a function of optical power have been measured. Also the photoresponsivity vs. wavelength has been measured for various bias voltages. The speed of the detectors was studied by using a colliding pulse mode-locked laser. The experimental results show that the leakage currents in GaAs-MSM detectors are much smaller than in Si detectors, but still a reasonable photoresponsivity can be achieved also in Si detectors. The speed of the Si detectors could be improved by fabricating them on an epitaxial n+ - n− -structure, which results in a fast impulse response 625 ps (FWHM), 292 ps (fall time).

AB - In this paper we present a comparative study of the optical DC and transient properties of the Si- and GaAs-metal-semiconductor-metal photodetectors (MSM-PD's). The interdigitated metal fingers for the detectors were fabricated on n-type Si and semi-insulating GaAs substrates by using optical lithography and lift-off technique. The width and spacing of the interdigitated metal fingers varied between 1 and 2 μm, and the detector area varied between 100 × 100 μm2 and 500 × 500 μm2. For Si-MSM-PD's we used 150 nm thick aluminum and for GaAs-MSM-PD's 280 nm thick Ti/Pt/Au multilayer metallization for the Schottky barrier formation. The Schottky diode capacitance vs. bias voltage as well as dark and illuminated I-V characteristics as a function of optical power have been measured. Also the photoresponsivity vs. wavelength has been measured for various bias voltages. The speed of the detectors was studied by using a colliding pulse mode-locked laser. The experimental results show that the leakage currents in GaAs-MSM detectors are much smaller than in Si detectors, but still a reasonable photoresponsivity can be achieved also in Si detectors. The speed of the Si detectors could be improved by fabricating them on an epitaxial n+ - n− -structure, which results in a fast impulse response 625 ps (FWHM), 292 ps (fall time).

U2 - 10.1088/0031-8949/1997/T69/030

DO - 10.1088/0031-8949/1997/T69/030

M3 - Article

VL - T69

SP - 163

EP - 166

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -