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Keyphrases
Gallium Arsenide
100%
Metal-semiconductor-metal Photodetector
100%
Si Detector
75%
Bias Voltage
50%
Photoresponsivity
50%
Metal Fingers
50%
Capacitance
25%
I-V Characteristics
25%
Impulse Response
25%
Optical Power
25%
Schottky Diode
25%
Leakage Current
25%
Epitaxial
25%
Phosphorylated tau
25%
GaAs Substrate
25%
Lift-off
25%
Barrier Formation
25%
Schottky Barrier
25%
Optical Lithography
25%
Fall Time
25%
Fast-impulses
25%
Multilayer Metallization
25%
Transient Property
25%
Semi-insulating GaAs
25%
MSM Detector
25%
N-type Si
25%
DC Properties
25%
Colliding-Pulse Mode-locked Lasers
25%
INIS
metals
100%
semiconductor materials
100%
photodetectors
100%
gallium arsenides
100%
fingers
25%
speed
25%
voltage
25%
layers
12%
capacitance
12%
width
12%
pulses
12%
substrates
12%
power
12%
lifts
12%
barriers
12%
wavelengths
12%
lasers
12%
aluminum
12%
i-v characteristic
12%
impulse
12%
schottky barrier diodes
12%
epitaxy
12%
leakage current
12%
Engineering
Gallium Arsenide
100%
Photometer
100%
Bias Voltage
50%
Experimental Result
25%
Impulse Response
25%
Metallizations
25%
Gaas Substrate
25%
Optical Lithography
25%
Optical Power
25%
Schottky Barrier
25%
Fall Time
25%
Current-Voltage Characteristic
25%
Material Science
Gallium Arsenide
100%
Photosensor
100%
Lithography
20%
Schottky Diode
20%
Schottky Barrier
20%
Capacitance
20%
Current-Voltage Characteristic
20%
Optical Power
20%
Aluminum
20%
Mode-Locked Laser
20%
Physics
Photometer
100%
Optical Power
25%
Schottky Diode
25%
Metallizing
25%
Mode-Locked Laser
25%