A Comparative Study of Various MOSFET Models at Radio Frequencies

Jan Saijets, M. Andersson, Markku Åberg

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

We have compared and systematically evaluated four mainstream MOSFET models (EKV, SPICE Level 3, Bsim3v3 and Philips MOS Model 9) at radio frequencies. Furthermore, we have tested some improvements proposed for the models in the GHz region. In the first phase complete scalable DC models were determined, and the high frequency model parameters were then extracted from properly designed RF test transistors by using S-parameter fitting and capacitance measurements. The inaccuracies in the AC results were found to be mainly a consequence of the problems in the modelling of the DC conductances. The Bsim3v3 and MOS9 models seem to yield the most realistic AC characteristics of the models.
The accuracy of the MOS9 model is slightly inferior to that of the Bsim3v3 model, but it may be improved to the same level or even beyond, simply by adding a gate-bulk zero-bias capacitance to the MOSFET equivalent circuit, which has been done in many commercial circuit simulators.
The best models give accurate results up to 4 GHz, and after a careful parameter extraction even at 10 GHz. We also have demonstrated the applicability of the improved models in the design of a LNA CMOS circuit.
Original languageEnglish
Pages (from-to)5-17
JournalAnalog Integrated Circuits and Signal Processing
Volume33
Issue number1
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Parameter extraction
Capacitance measurement
Networks (circuits)
Scattering parameters
SPICE
Equivalent circuits
Transistors
Capacitance
Simulators

Cite this

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title = "A Comparative Study of Various MOSFET Models at Radio Frequencies",
abstract = "We have compared and systematically evaluated four mainstream MOSFET models (EKV, SPICE Level 3, Bsim3v3 and Philips MOS Model 9) at radio frequencies. Furthermore, we have tested some improvements proposed for the models in the GHz region. In the first phase complete scalable DC models were determined, and the high frequency model parameters were then extracted from properly designed RF test transistors by using S-parameter fitting and capacitance measurements. The inaccuracies in the AC results were found to be mainly a consequence of the problems in the modelling of the DC conductances. The Bsim3v3 and MOS9 models seem to yield the most realistic AC characteristics of the models. The accuracy of the MOS9 model is slightly inferior to that of the Bsim3v3 model, but it may be improved to the same level or even beyond, simply by adding a gate-bulk zero-bias capacitance to the MOSFET equivalent circuit, which has been done in many commercial circuit simulators. The best models give accurate results up to 4 GHz, and after a careful parameter extraction even at 10 GHz. We also have demonstrated the applicability of the improved models in the design of a LNA CMOS circuit.",
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A Comparative Study of Various MOSFET Models at Radio Frequencies. / Saijets, Jan; Andersson, M.; Åberg, Markku.

In: Analog Integrated Circuits and Signal Processing, Vol. 33, No. 1, 2002, p. 5-17.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Saijets, Jan

AU - Andersson, M.

AU - Åberg, Markku

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AB - We have compared and systematically evaluated four mainstream MOSFET models (EKV, SPICE Level 3, Bsim3v3 and Philips MOS Model 9) at radio frequencies. Furthermore, we have tested some improvements proposed for the models in the GHz region. In the first phase complete scalable DC models were determined, and the high frequency model parameters were then extracted from properly designed RF test transistors by using S-parameter fitting and capacitance measurements. The inaccuracies in the AC results were found to be mainly a consequence of the problems in the modelling of the DC conductances. The Bsim3v3 and MOS9 models seem to yield the most realistic AC characteristics of the models. The accuracy of the MOS9 model is slightly inferior to that of the Bsim3v3 model, but it may be improved to the same level or even beyond, simply by adding a gate-bulk zero-bias capacitance to the MOSFET equivalent circuit, which has been done in many commercial circuit simulators. The best models give accurate results up to 4 GHz, and after a careful parameter extraction even at 10 GHz. We also have demonstrated the applicability of the improved models in the design of a LNA CMOS circuit.

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