A design-oriented charge-based simplified model for FDSOI MOSFETs

Alessandro Pezzotta; Farzan Jazaeri; Heorhii Bohuslavskyi; Louis Hutin; Christian Enz

doi:10.1109/ulis.2018.8354764

A design-oriented charge-based simplified model for FDSOI MOSFETs

Alessandro Pezzotta^*, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Christian Enz

^*Corresponding author for this work

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified EKV model to FDSOI processes. This will help the designer to find the right trade-off in terms of design parameters, including the back-gate biasing. A comparison with measurement results from a 28-nm FDSOI CMOS process is provided, assessing the excellent accuracy of the proposed.

Original language	English
Title of host publication	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Editors	Viktor Sverdlov, Carlos Sampedro, Luca Donetti, Francisco Gamiz
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5386-4811-7
DOIs	https://doi.org/10.1109/ulis.2018.8354764
Publication status	Published - Mar 2018
MoE publication type	A4 Article in a conference publication

Keywords

FDSOI
back-gate
modeling
simplified EKV

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10.1109/ulis.2018.8354764

Cite this

Pezzotta, A., Jazaeri, F., Bohuslavskyi, H., Hutin, L., & Enz, C. (2018). A design-oriented charge-based simplified model for FDSOI MOSFETs. In V. Sverdlov, C. Sampedro, L. Donetti, & F. Gamiz (Eds.), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 (pp. 1-4). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ulis.2018.8354764

Pezzotta, Alessandro ; Jazaeri, Farzan ; Bohuslavskyi, Heorhii et al. / A design-oriented charge-based simplified model for FDSOI MOSFETs. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. editor / Viktor Sverdlov ; Carlos Sampedro ; Luca Donetti ; Francisco Gamiz. IEEE Institute of Electrical and Electronic Engineers, 2018. pp. 1-4

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Pezzotta, A, Jazaeri, F, Bohuslavskyi, H, Hutin, L & Enz, C 2018, A design-oriented charge-based simplified model for FDSOI MOSFETs. in V Sverdlov, C Sampedro, L Donetti & F Gamiz (eds), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. IEEE Institute of Electrical and Electronic Engineers, pp. 1-4. https://doi.org/10.1109/ulis.2018.8354764

A design-oriented charge-based simplified model for FDSOI MOSFETs. / Pezzotta, Alessandro; Jazaeri, Farzan; Bohuslavskyi, Heorhii et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. ed. / Viktor Sverdlov; Carlos Sampedro; Luca Donetti; Francisco Gamiz. IEEE Institute of Electrical and Electronic Engineers, 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AB - In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified EKV model to FDSOI processes. This will help the designer to find the right trade-off in terms of design parameters, including the back-gate biasing. A comparison with measurement results from a 28-nm FDSOI CMOS process is provided, assessing the excellent accuracy of the proposed.

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BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

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Pezzotta A, Jazaeri F, Bohuslavskyi H, Hutin L, Enz C. A design-oriented charge-based simplified model for FDSOI MOSFETs. In Sverdlov V, Sampedro C, Donetti L, Gamiz F, editors, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. IEEE Institute of Electrical and Electronic Engineers. 2018. p. 1-4 doi: 10.1109/ulis.2018.8354764

A design-oriented charge-based simplified model for FDSOI MOSFETs

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Keywords

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