A Full Ka-Band GaN-on-Si Low-Noise Amplifier

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In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.

Original languageEnglish
Title of host publication2020 50th European Microwave Conference, EuMC 2020
PublisherIEEE Institute of Electrical and Electronic Engineers
Number of pages4
ISBN (Electronic)978-2-87487-059-0
ISBN (Print)978-1-7281-7039-8
Publication statusPublished - Jan 2021
MoE publication typeA4 Article in a conference publication
Event50th European Microwave Conference, EuMC 2020 - Utrecht, Netherlands
Duration: 12 Jan 202114 Jan 2021


Conference50th European Microwave Conference, EuMC 2020


  • gallium nitride
  • HEMTs
  • linearity
  • low-noise amplifiers
  • MMICs

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