A Full Ka-Band GaN-on-Si Low-Noise Amplifier

Dristy Parveg; Mikko Varonen; Mikko Kantanen

doi:10.23919/EuMC48046.2021.9337964

A Full Ka-Band GaN-on-Si Low-Noise Amplifier

Dristy Parveg, Mikko Varonen, Mikko Kantanen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

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Abstract

In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.

Original language	English
Title of host publication	2020 50th European Microwave Conference, EuMC 2020
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1015-1018
ISBN (Electronic)	978-2-87487-059-0
ISBN (Print)	978-1-7281-7039-8
DOIs	https://doi.org/10.23919/EuMC48046.2021.9337964
Publication status	Published - Jan 2021
MoE publication type	A4 Article in a conference publication
Event	50th European Microwave Conference, EuMC 2020 - Utrecht, Netherlands Duration: 12 Jan 2021 → 14 Jan 2021

Conference

Conference	50th European Microwave Conference, EuMC 2020
Country/Territory	Netherlands
City	Utrecht
Period	12/01/21 → 14/01/21

Keywords

gallium nitride
HEMTs
linearity
low-noise amplifiers
MMICs

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10.23919/EuMC48046.2021.9337964

Ka-GaN_LNAAccepted author manuscript, 782 KB

Cite this

@inproceedings{2c9f079fbfc24411a221af428f30dc0a,

title = "A Full Ka-Band GaN-on-Si Low-Noise Amplifier",

abstract = "In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.",

keywords = "gallium nitride, HEMTs, linearity, low-noise amplifiers, MMICs",

author = "Dristy Parveg and Mikko Varonen and Mikko Kantanen",

note = "Funding Information: ACKNOWLEDGMENT The work of M. Varonen was supported through the Academy of Finland Research Fellow project (decision no 310234). The small-signal transistor model used for re-simulations was developed under the European Union for project H2020-COMPET-2017 MiGANSOS No. 776322. The authors would also like to thank AMCAD Engineering for providing the microwave circuit stability analyzer software STAN tool. Publisher Copyright: {\textcopyright} 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 50th European Microwave Conference, EuMC 2020 ; Conference date: 12-01-2021 Through 14-01-2021",

year = "2021",

month = jan,

doi = "10.23919/EuMC48046.2021.9337964",

language = "English",

isbn = "978-1-7281-7039-8",

pages = "1015--1018",

booktitle = "2020 50th European Microwave Conference, EuMC 2020",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

TY - GEN

T1 - A Full Ka-Band GaN-on-Si Low-Noise Amplifier

AU - Parveg, Dristy

AU - Varonen, Mikko

AU - Kantanen, Mikko

N1 - Funding Information: ACKNOWLEDGMENT The work of M. Varonen was supported through the Academy of Finland Research Fellow project (decision no 310234). The small-signal transistor model used for re-simulations was developed under the European Union for project H2020-COMPET-2017 MiGANSOS No. 776322. The authors would also like to thank AMCAD Engineering for providing the microwave circuit stability analyzer software STAN tool. Publisher Copyright: © 2021 EuMA. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1

Y1 - 2021/1

N2 - In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.

AB - In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.

KW - gallium nitride

KW - HEMTs

KW - linearity

KW - low-noise amplifiers

KW - MMICs

UR - http://www.scopus.com/inward/record.url?scp=85100913922&partnerID=8YFLogxK

U2 - 10.23919/EuMC48046.2021.9337964

DO - 10.23919/EuMC48046.2021.9337964

M3 - Conference article in proceedings

AN - SCOPUS:85100913922

SN - 978-1-7281-7039-8

SP - 1015

EP - 1018

BT - 2020 50th European Microwave Conference, EuMC 2020

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 50th European Microwave Conference, EuMC 2020

Y2 - 12 January 2021 through 14 January 2021

ER -

A Full Ka-Band GaN-on-Si Low-Noise Amplifier

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Keywords

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