A Full Ka-Band GaN-on-Si Low-Noise Amplifier

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Abstract

In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.

Original languageEnglish
Title of host publication2020 50th European Microwave Conference, EuMC 2020
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1015-1018
Number of pages4
ISBN (Electronic)978-2-87487-059-0
ISBN (Print)978-1-7281-7039-8
DOIs
Publication statusPublished - Jan 2021
MoE publication typeA4 Article in a conference publication
Event50th European Microwave Conference, EuMC 2020 - Utrecht, Netherlands
Duration: 12 Jan 202114 Jan 2021

Conference

Conference50th European Microwave Conference, EuMC 2020
CountryNetherlands
CityUtrecht
Period12/01/2114/01/21

Keywords

  • gallium nitride
  • HEMTs
  • linearity
  • low-noise amplifiers
  • MMICs

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