A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

In this paper, we present a highly linear balanced IQ resistive mixer implemented in a 100-nm GaN HEMT on a silicon substrate that covers the whole Ka-band. The mixer achieves an input third-order intercept point (IIP3) of 30 dBm with only 10.5 dBm of LO input power at 35 GHz which means a record linear efficiency of 20 dB. The Measured 1-dB input compression point was 15 dBm at 34 GHz. The mixer shows a better than 10 dB conversion loss over the entire Ka-band.
Original languageEnglish
Title of host publication2021 IEEE MTT-S International Microwave Symposium, IMS 2021
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages645-648
Number of pages4
ISBN (Electronic)978-1-6654-0307-8
ISBN (Print)978-1-6654-3141-5
DOIs
Publication statusPublished - 7 Jun 2021
MoE publication typeA4 Article in a conference publication
EventIEEE MTT-S International Microwave Symposium, IMS 2021 - Atlanta, United States
Duration: 7 Jun 202125 Jun 2021

Publication series

SeriesIEEE MTT-S International Microwave Symposium Digest
ISSN0149-645X

Conference

ConferenceIEEE MTT-S International Microwave Symposium, IMS 2021
Country/TerritoryUnited States
CityAtlanta
Period7/06/2125/06/21

Keywords

  • FMCW
  • GaN
  • GaN-on-Silicon
  • HEMT
  • high-linear
  • IIP3
  • Ka-band
  • mixer
  • MMICs
  • passive mixer
  • resistive mixer
  • radar

Fingerprint

Dive into the research topics of 'A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer'. Together they form a unique fingerprint.

Cite this