A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer

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    Abstract

    In this paper, we present a highly linear balanced IQ resistive mixer implemented in a 100-nm GaN HEMT on a silicon substrate that covers the whole Ka-band. The mixer achieves an input third-order intercept point (IIP3) of 30 dBm with only 10.5 dBm of LO input power at 35 GHz which means a record linear efficiency of 20 dB. The Measured 1-dB input compression point was 15 dBm at 34 GHz. The mixer shows a better than 10 dB conversion loss over the entire Ka-band.
    Original languageEnglish
    Title of host publication2021 IEEE MTT-S International Microwave Symposium, IMS 2021
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages645-648
    Number of pages4
    ISBN (Electronic)978-1-6654-0307-8
    ISBN (Print)978-1-6654-3141-5
    DOIs
    Publication statusPublished - 7 Jun 2021
    MoE publication typeA4 Article in a conference publication
    EventIEEE MTT-S International Microwave Symposium, IMS 2021 - Atlanta, United States
    Duration: 7 Jun 202125 Jun 2021

    Publication series

    SeriesIEEE MTT-S International Microwave Symposium
    ISSN0149-645X

    Conference

    ConferenceIEEE MTT-S International Microwave Symposium, IMS 2021
    Country/TerritoryUnited States
    CityAtlanta
    Period7/06/2125/06/21

    Keywords

    • FMCW
    • GaN
    • GaN-on-Silicon
    • HEMT
    • high-linear
    • IIP3
    • Ka-band
    • mixer
    • MMICs
    • passive mixer
    • resistive mixer
    • radar

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