@inproceedings{118c8440954e4164a990929e2d455739,
title = "A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer",
abstract = "In this paper, we present a highly linear balanced IQ resistive mixer implemented in a 100-nm GaN HEMT on a silicon substrate that covers the whole Ka-band. The mixer achieves an input third-order intercept point (IIP3) of 30 dBm with only 10.5 dBm of LO input power at 35 GHz which means a record linear efficiency of 20 dB. The Measured 1-dB input compression point was 15 dBm at 34 GHz. The mixer shows a better than 10 dB conversion loss over the entire Ka-band.",
keywords = "FMCW, GaN, GaN-on-Silicon, HEMT, high-linear, IIP3, Ka-band, mixer, MMICs, passive mixer, resistive mixer, radar",
author = "Dristy Parveg and Mikko Varonen and Mikko Kantanen and Jehki Pusa",
note = "Funding Information: ACKNOWLEDGMENT This work was supported through the Academy of Finland project MIDERI (decision no. 310234) and the Business Finland project LuxTurrim5G+ (decision no. 2604/31/2019). The measurements were carried out at Millilab, the Millimeter Wave Laboratory of Finland, and the external laboratory of the European Space Agency (ESA). Publisher Copyright: {\textcopyright} 2021 IEEE.; IEEE MTT-S International Microwave Symposium, IMS 2021 ; Conference date: 07-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "7",
doi = "10.1109/IMS19712.2021.9574822",
language = "English",
isbn = "978-1-6654-3141-5",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
pages = "645--648",
booktitle = "2021 IEEE MTT-S International Microwave Symposium, IMS 2021",
address = "United States",
}