A fully integrated 2:1 self-oscillating switched-capacitor DC-DC converter in 28 nm UTBB FD-SOI

Matthew Turnquist (Corresponding Author), Markus Hiienkari, Jani Mäkipää, Lauri Koskinen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC-DC converter that supplies these processors is critical since energy consumption of the DC-DC/processor system is proportional to the DC-DC converter efficiency. The DC-DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC-DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter's large load power range and high efficiency make it an excellent fit for energy-constrained processors.
Original languageEnglish
Article number17
JournalJournal of Low Power Electronics and Applications
Volume6
Issue number3
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

DC-DC converters
Capacitors
Oxides
Threshold voltage
Conversion efficiency
Energy utilization
Sensors
Internet of things

Keywords

  • switched-capacitor
  • DC-DC converter
  • near-threshold voltage
  • self-oscillating
  • ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI)
  • fully-depleted SOI (UTBB FD-SOI)
  • sub-threshold
  • low voltage regulation

Cite this

Turnquist, Matthew ; Hiienkari, Markus ; Mäkipää, Jani ; Koskinen, Lauri. / A fully integrated 2:1 self-oscillating switched-capacitor DC-DC converter in 28 nm UTBB FD-SOI. In: Journal of Low Power Electronics and Applications. 2016 ; Vol. 6, No. 3.
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abstract = "The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC-DC converter that supplies these processors is critical since energy consumption of the DC-DC/processor system is proportional to the DC-DC converter efficiency. The DC-DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC-DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75{\%} for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86{\%}. The converter's large load power range and high efficiency make it an excellent fit for energy-constrained processors.",
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A fully integrated 2:1 self-oscillating switched-capacitor DC-DC converter in 28 nm UTBB FD-SOI. / Turnquist, Matthew (Corresponding Author); Hiienkari, Markus; Mäkipää, Jani; Koskinen, Lauri.

In: Journal of Low Power Electronics and Applications, Vol. 6, No. 3, 17, 2016.

Research output: Contribution to journalArticleScientificpeer-review

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N2 - The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC-DC converter that supplies these processors is critical since energy consumption of the DC-DC/processor system is proportional to the DC-DC converter efficiency. The DC-DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC-DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter's large load power range and high efficiency make it an excellent fit for energy-constrained processors.

AB - The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC-DC converter that supplies these processors is critical since energy consumption of the DC-DC/processor system is proportional to the DC-DC converter efficiency. The DC-DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC-DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter's large load power range and high efficiency make it an excellent fit for energy-constrained processors.

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