Keyphrases
Low Noise Amplifier
100%
Total Radiation
100%
G-band
100%
SiGe BiCMOS
100%
Area-efficient
100%
Temperature Compensation Circuit
100%
Noise Figure
66%
Temperature Effect
33%
Temperature Range
33%
On chip
33%
Performance Measures
33%
Room Temperature
33%
3-dB Bandwidth
33%
Millimeter-wave Frequency
33%
Millimeter Wave
33%
Temperature Variation
33%
Noise Measurement
33%
Operation Conditions
33%
Measured Gain
33%
Minimum Noise Figure
33%
Intolerance
33%
Temperature Impact
33%
Radiation Exposure
33%
Radiation Response
33%
Collector Current
33%
Amplifier Design
33%
Temperature Radiation
33%
Large Temperature Variation
33%
BiCMOS
33%
Negative Temperature Dependence
33%
Bias Circuit
33%
Positive Temperatures
33%
SiGe Technology
33%
INIS
amplifiers
100%
noise
100%
germanium silicides
100%
doses (radiation)
100%
variations
66%
gain
66%
ghz range
50%
performance
33%
temperature dependence
33%
design
16%
tolerance
16%
operation
16%
compacts
16%
radiations
16%
temperature range
16%
temperature range 0273-0400 k
16%
carbon 20
16%
Engineering
Noise Figure
100%
Low Noise Amplifier
100%
Millimeter Wave
66%
Db Bandwidth
33%
Current Collector
33%
Temperature Range
33%
Amplifier
33%
Fits and Tolerances
33%
Temperature Dependence
33%
Room Temperature
33%