A High-kt2 Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator

Jialin Wang; Mingyo Park; Stefan Mertin; Tuomas Pensala; Farrokh Ayazi; Azadeh Ansari

doi:10.1109/IFCS-ISAF41089.2020.9234831

A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator

Jialin Wang
, Mingyo Park
, Stefan Mertin
, Tuomas Pensala
, Farrokh Ayazi
, Azadeh Ansari

Georgia Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

15 Citations (Scopus)

Abstract

This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ~30% Sc/(Al+Sc) ratio. Operating at ~3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ( kt ² ) of 18% with a mechanical quality factor ( Qm) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of -350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al _0.7 Sc _0.3 N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e ₃₃ ), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.

Original language	English
Title of host publication	Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	3
ISBN (Electronic)	978-1-7281-6430-4
ISBN (Print)	978-1-7281-6753-4
DOIs	https://doi.org/10.1109/IFCS-ISAF41089.2020.9234831
Publication status	Published - 22 Oct 2020
MoE publication type	A4 Article in a conference publication
Event	Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020: Online - Virtual, Keystone, United States Duration: 19 Jul 2020 → 23 Jul 2020

Publication series

Series	IEEE International Symposium on Applications of Ferroelectrics (ISAF)
ISSN	2375-0448

Conference

Conference	Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020
Country/Territory	United States
City	Keystone
Period	19/07/20 → 23/07/20

Funding

This work was supported by the National Science Foundation 1542174) and National Science Foundation CAREER Award 1944304). The sputtered piezo-stack Mo/Al0.7Sc0.3N/Mo was provided by VTT Technical Research Centre of Finland. The FBAR devices were fabricated at the Institute for Electronics and Nanotechnology (IEN) cleanroom facility at the Georgia Institute of Technology, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-1542174). This work is supported by NSF CAREER award (ECCS-1944304).

Keywords

Acoustic resonators
Aluminum Scandium Nitride
FBAR
Ferroelectric
Filters
Frequency tuning
Piezoelectric films

Access to Document

10.1109/IFCS-ISAF41089.2020.9234831

Cite this

Wang, J., Park, M., Mertin, S., Pensala, T., Ayazi, F., & Ansari, A. (2020). A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator. In Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020) Article 9234831 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/IFCS-ISAF41089.2020.9234831

Wang, Jialin ; Park, Mingyo ; Mertin, Stefan et al. / A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator. Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020). IEEE Institute of Electrical and Electronic Engineers, 2020. (IEEE International Symposium on Applications of Ferroelectrics (ISAF)).

@inproceedings{a42ecf9ab87e41ff8618139faa91eb0a,

title = "A High-kt2 Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator",

abstract = "This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with \textasciitilde{}30\% Sc/(Al+Sc) ratio. Operating at \textasciitilde{}3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ( kt 2 ) of 18\% with a mechanical quality factor ( Qm) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of -350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al 0.7 Sc 0.3 N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e 33 ), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.",

keywords = "Acoustic resonators, Aluminum Scandium Nitride, FBAR, Ferroelectric, Filters, Frequency tuning, Piezoelectric films",

author = "Jialin Wang and Mingyo Park and Stefan Mertin and Tuomas Pensala and Farrokh Ayazi and Azadeh Ansari",

note = "Funding Information: This work was supported by the National Science Foundation 1542174) and National Science Foundation CAREER Award 1944304). Funding Information: The sputtered piezo-stack Mo/Al0.7Sc0.3N/Mo was provided by VTT Technical Research Centre of Finland. The FBAR devices were fabricated at the Institute for Electronics and Nanotechnology (IEN) cleanroom facility at the Georgia Institute of Technology, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-1542174). This work is supported by NSF CAREER award (ECCS-1944304). Publisher Copyright: {\textcopyright} 2020 IEEE.; Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020 : Online ; Conference date: 19-07-2020 Through 23-07-2020",

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doi = "10.1109/IFCS-ISAF41089.2020.9234831",

language = "English",

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Wang, J, Park, M, Mertin, S, Pensala, T, Ayazi, F & Ansari, A 2020, A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator. in Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020)., 9234831, IEEE Institute of Electrical and Electronic Engineers, IEEE International Symposium on Applications of Ferroelectrics (ISAF), Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020, Keystone, Colorado, United States, 19/07/20. https://doi.org/10.1109/IFCS-ISAF41089.2020.9234831

A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator. / Wang, Jialin; Park, Mingyo; Mertin, Stefan et al.
Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020). IEEE Institute of Electrical and Electronic Engineers, 2020. 9234831 (IEEE International Symposium on Applications of Ferroelectrics (ISAF)).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - A High-kt2 Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator

AU - Wang, Jialin

AU - Park, Mingyo

AU - Mertin, Stefan

AU - Pensala, Tuomas

AU - Ayazi, Farrokh

AU - Ansari, Azadeh

N1 - Funding Information: This work was supported by the National Science Foundation 1542174) and National Science Foundation CAREER Award 1944304). Funding Information: The sputtered piezo-stack Mo/Al0.7Sc0.3N/Mo was provided by VTT Technical Research Centre of Finland. The FBAR devices were fabricated at the Institute for Electronics and Nanotechnology (IEN) cleanroom facility at the Georgia Institute of Technology, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-1542174). This work is supported by NSF CAREER award (ECCS-1944304). Publisher Copyright: © 2020 IEEE.

PY - 2020/10/22

Y1 - 2020/10/22

N2 - This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ~30% Sc/(Al+Sc) ratio. Operating at ~3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ( kt 2 ) of 18% with a mechanical quality factor ( Qm) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of -350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al 0.7 Sc 0.3 N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e 33 ), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.

AB - This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ~30% Sc/(Al+Sc) ratio. Operating at ~3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ( kt 2 ) of 18% with a mechanical quality factor ( Qm) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of -350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al 0.7 Sc 0.3 N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e 33 ), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.

KW - Acoustic resonators

KW - Aluminum Scandium Nitride

KW - FBAR

KW - Ferroelectric

KW - Filters

KW - Frequency tuning

KW - Piezoelectric films

UR - https://www.scopus.com/pages/publications/85096991862

U2 - 10.1109/IFCS-ISAF41089.2020.9234831

DO - 10.1109/IFCS-ISAF41089.2020.9234831

M3 - Conference article in proceedings

AN - SCOPUS:85096991862

SN - 978-1-7281-6753-4

T3 - IEEE International Symposium on Applications of Ferroelectrics (ISAF)

BT - Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020

Y2 - 19 July 2020 through 23 July 2020

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Wang J, Park M, Mertin S, Pensala T, Ayazi F, Ansari A. A High-k_t² Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator. In Joint Conference of the IEEE International Frequency Control Symposium and IEEE International Symposium on Applications of Ferroelectrics (IFCS-ISAF 2020). IEEE Institute of Electrical and Electronic Engineers. 2020. 9234831. (IEEE International Symposium on Applications of Ferroelectrics (ISAF)). doi: 10.1109/IFCS-ISAF41089.2020.9234831