A K-band RF-MEMS-enabled reconfigurable and multifunctional low-noise amplifier hybrid circuit

R. Malmqvist (Corresponding Author), C. Samuelsson, A. Gustafsson, Pekka Rantakari, S. Reyaz, Tauno Vähä-Heikkilä, A. Rydberg, Jussi Varis, D. Smith, R. Baggen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.
Original languageEnglish
Article number284767
Number of pages7
JournalActive and Passive Electronic Components
Volume2011
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • K-band
  • RF-MEMS
  • SPDT switch
  • low noise amplifier
  • MMIC

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