A K-band RF-MEMS-enabled reconfigurable and multifunctional low-noise amplifier hybrid circuit

R. Malmqvist (Corresponding Author), C. Samuelsson, A. Gustafsson, Pekka Rantakari, S. Reyaz, Tauno Vähä-Heikkilä, A. Rydberg, Jussi Varis, D. Smith, R. Baggen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.
Original languageEnglish
Article number284767
Number of pages7
JournalActive and Passive Electronic Components
Volume2011
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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Low noise amplifiers
MEMS
Networks (circuits)
Noise figure
Electric power utilization
Switches

Keywords

  • K-band
  • RF-MEMS
  • SPDT switch
  • low noise amplifier
  • MMIC

Cite this

@article{6a13e00aeb6d44fca51561b8be5049d8,
title = "A K-band RF-MEMS-enabled reconfigurable and multifunctional low-noise amplifier hybrid circuit",
abstract = "A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.",
keywords = "K-band, RF-MEMS, SPDT switch, low noise amplifier, MMIC",
author = "R. Malmqvist and C. Samuelsson and A. Gustafsson and Pekka Rantakari and S. Reyaz and Tauno V{\"a}h{\"a}-Heikkil{\"a} and A. Rydberg and Jussi Varis and D. Smith and R. Baggen",
note = "Project code: 20392",
year = "2011",
doi = "10.1155/2011/284767",
language = "English",
volume = "2011",
journal = "Active and Passive Electronic Components",
issn = "0882-7516",
publisher = "Hindawi",

}

A K-band RF-MEMS-enabled reconfigurable and multifunctional low-noise amplifier hybrid circuit. / Malmqvist, R. (Corresponding Author); Samuelsson, C.; Gustafsson, A.; Rantakari, Pekka; Reyaz, S.; Vähä-Heikkilä, Tauno; Rydberg, A.; Varis, Jussi; Smith, D.; Baggen, R.

In: Active and Passive Electronic Components, Vol. 2011, 284767, 2011.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A K-band RF-MEMS-enabled reconfigurable and multifunctional low-noise amplifier hybrid circuit

AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Gustafsson, A.

AU - Rantakari, Pekka

AU - Reyaz, S.

AU - Vähä-Heikkilä, Tauno

AU - Rydberg, A.

AU - Varis, Jussi

AU - Smith, D.

AU - Baggen, R.

N1 - Project code: 20392

PY - 2011

Y1 - 2011

N2 - A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.

AB - A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.

KW - K-band

KW - RF-MEMS

KW - SPDT switch

KW - low noise amplifier

KW - MMIC

U2 - 10.1155/2011/284767

DO - 10.1155/2011/284767

M3 - Article

VL - 2011

JO - Active and Passive Electronic Components

JF - Active and Passive Electronic Components

SN - 0882-7516

M1 - 284767

ER -