A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

R. Malmqvist, C. Samuelsson, A. Gustafsson, H. Maher, Tauno Vähä-Heikkilä, R. Baggen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    9 Citations (Scopus)

    Abstract

    A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented.
    The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively.
    The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off.
    Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationIEEE/MTT-S International Microwave Symposium Digest
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages3
    ISBN (Electronic)978-1-4673-1088-8
    ISBN (Print)978-1-4673-1087-1, 978-1-4673-1085-7
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    EventIEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, Canada
    Duration: 17 Jun 201222 Jun 2012

    Conference

    ConferenceIEEE MTT-S International Microwave Symposium, IMS 2012
    Abbreviated titleIMS 2012
    Country/TerritoryCanada
    CityMontreal
    Period17/06/1222/06/12

    Keywords

    • Gallium arsenide
    • low-noise amplifiers
    • MMIC
    • radio frequency microelectromechanical systems
    • switches

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