A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

R. Malmqvist, C. Samuelsson, A. Gustafsson, H. Maher, Tauno Vähä-Heikkilä, R. Baggen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

7 Citations (Scopus)

Abstract

A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented.
The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively.
The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off.
Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE/MTT-S International Microwave Symposium Digest
PublisherInstitute of Electrical and Electronic Engineers IEEE
Number of pages3
ISBN (Electronic)978-1-4673-1088-8
ISBN (Print)978-1-4673-1087-1, 978-1-4673-1085-7
DOIs
Publication statusPublished - 2012
MoE publication typeNot Eligible
EventIEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, Canada
Duration: 17 Jun 201222 Jun 2012

Conference

ConferenceIEEE MTT-S International Microwave Symposium, IMS 2012
Abbreviated titleIMS 2012
CountryCanada
CityMontreal
Period17/06/1222/06/12

Fingerprint

Monolithic microwave integrated circuits
MEMS
Noise figure
Networks (circuits)
Switches

Keywords

  • Gallium arsenide
  • low-noise amplifiers
  • MMIC
  • radio frequency microelectromechanical systems
  • switches

Cite this

Malmqvist, R., Samuelsson, C., Gustafsson, A., Maher, H., Vähä-Heikkilä, T., & Baggen, R. (2012). A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. In Proceedings : IEEE/MTT-S International Microwave Symposium Digest [6259517] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/MWSYM.2012.6259517
Malmqvist, R. ; Samuelsson, C. ; Gustafsson, A. ; Maher, H. ; Vähä-Heikkilä, Tauno ; Baggen, R. / A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. Proceedings : IEEE/MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronic Engineers IEEE, 2012.
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title = "A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC",
abstract = "A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.",
keywords = "Gallium arsenide, low-noise amplifiers, MMIC, radio frequency microelectromechanical systems, switches",
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Malmqvist, R, Samuelsson, C, Gustafsson, A, Maher, H, Vähä-Heikkilä, T & Baggen, R 2012, A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. in Proceedings : IEEE/MTT-S International Microwave Symposium Digest., 6259517, Institute of Electrical and Electronic Engineers IEEE, IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, Canada, 17/06/12. https://doi.org/10.1109/MWSYM.2012.6259517

A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. / Malmqvist, R.; Samuelsson, C.; Gustafsson, A.; Maher, H.; Vähä-Heikkilä, Tauno; Baggen, R.

Proceedings : IEEE/MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronic Engineers IEEE, 2012. 6259517.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Malmqvist, R.

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AU - Vähä-Heikkilä, Tauno

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N2 - A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.

AB - A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.

KW - Gallium arsenide

KW - low-noise amplifiers

KW - MMIC

KW - radio frequency microelectromechanical systems

KW - switches

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Malmqvist R, Samuelsson C, Gustafsson A, Maher H, Vähä-Heikkilä T, Baggen R. A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. In Proceedings : IEEE/MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronic Engineers IEEE. 2012. 6259517 https://doi.org/10.1109/MWSYM.2012.6259517