A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

R. Malmqvist; C. Samuelsson; A. Gustafsson; H. Maher; Tauno Vähä-Heikkilä; R. Baggen

doi:10.1109/MWSYM.2012.6259517

A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

R. Malmqvist
, C. Samuelsson
, A. Gustafsson
, H. Maher
, Tauno Vähä-Heikkilä
, R. Baggen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

9 Citations (Scopus)

Abstract

A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented.
The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively.
The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off.
Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	IEEE/MTT-S International Microwave Symposium Digest
Publisher	IEEE Institute of Electrical and Electronic Engineers
Number of pages	3
ISBN (Electronic)	978-1-4673-1088-8
ISBN (Print)	978-1-4673-1087-1, 978-1-4673-1085-7
DOIs	https://doi.org/10.1109/MWSYM.2012.6259517
Publication status	Published - 2012
MoE publication type	Not Eligible
Event	IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, Canada Duration: 17 Jun 2012 → 22 Jun 2012

Conference

Conference	IEEE MTT-S International Microwave Symposium, IMS 2012
Abbreviated title	IMS 2012
Country/Territory	Canada
City	Montreal
Period	17/06/12 → 22/06/12

Keywords

Gallium arsenide
low-noise amplifiers
MMIC
radio frequency microelectromechanical systems
switches

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10.1109/MWSYM.2012.6259517

Cite this

@inproceedings{ac023899160a41589bdce409bdc69f24,

title = "A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC",

abstract = "A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.",

keywords = "Gallium arsenide, low-noise amplifiers, MMIC, radio frequency microelectromechanical systems, switches",

author = "R. Malmqvist and C. Samuelsson and A. Gustafsson and H. Maher and Tauno V{\"a}h{\"a}-Heikkil{\"a} and R. Baggen",

year = "2012",

doi = "10.1109/MWSYM.2012.6259517",

language = "English",

isbn = "978-1-4673-1087-1",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium, IMS 2012, IMS 2012 ; Conference date: 17-06-2012 Through 22-06-2012",

}

Malmqvist, R, Samuelsson, C, Gustafsson, A, Maher, H, Vähä-Heikkilä, T & Baggen, R 2012, A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. in Proceedings : IEEE/MTT-S International Microwave Symposium Digest., 6259517, IEEE Institute of Electrical and Electronic Engineers, IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, Quebec, Canada, 17/06/12. https://doi.org/10.1109/MWSYM.2012.6259517

A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC. / Malmqvist, R.; Samuelsson, C.; Gustafsson, A. et al.
Proceedings : IEEE/MTT-S International Microwave Symposium Digest. IEEE Institute of Electrical and Electronic Engineers, 2012. 6259517.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Gustafsson, A.

AU - Maher, H.

AU - Vähä-Heikkilä, Tauno

AU - Baggen, R.

PY - 2012

Y1 - 2012

N2 - A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.

AB - A K-band (18–26.5 GHz) single-chip reconfigurable and multi-functional RF-MEMS switched dual-LNA MMIC (optimized for lowest/highest possible noise figure/linearity) is presented. The two MEMS switched low-NF and high-linearity LNA circuit functions present 18.6 dB/9.0 dB, 2.4 dB/3.5 dB and 22 dBm/29 dBm of small-signal gain, noise figure and OIP 3 at 20 GHz, respectively. The in-band isolation levels of the two switched LNA paths equal 16–20 dB when the MEMS switches are switched on and off. Compared with two fixed (non-reconfigurable) LNA breakout circuits, the MEMS switched LNA circuit functions show 0.5–1.0 dB higher NF together with similar values of linearity at 15–25 GHz.

KW - Gallium arsenide

KW - low-noise amplifiers

KW - MMIC

KW - radio frequency microelectromechanical systems

KW - switches

U2 - 10.1109/MWSYM.2012.6259517

DO - 10.1109/MWSYM.2012.6259517

M3 - Conference article in proceedings

SN - 978-1-4673-1087-1

SN - 978-1-4673-1085-7

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE MTT-S International Microwave Symposium, IMS 2012

Y2 - 17 June 2012 through 22 June 2012

ER -

A K-band single-chip reconfigurable/multi-functional RF-MEMS switched dual-LNA MMIC

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Conference

Keywords

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